Hi there,We are developing a 50kW three phase inverter using 4Si/2SiC ANPC converter and are evaluating various SiC mosfets. Based on the ratings, FF2...
We are developing a 50kW three phase inverter using 4Si/2SiC ANPC converter and are evaluating various SiC mosfets. Based on the ratings, FF23MR12W1M1P_B11 looks like a good fit. However, the datasheet does not provide much information.
Edit: I think we misunderstood the definition of SOA. So the title of this post does not reflect our question. If we are not running the mosfet at saturaton zone, we don't nee to care about it, right? If I am correct, then our main concern is just the current limit of this module.
Based on our current design, the mosfet will be switched on and off at 700V (maximum) with a peak current at the AC output will be 62A which is beyond the 50A rating of the module. I know that the 50A rating is a limit when Tvj is 175C, and the RMS current through mosfet should be between 30A and 35A. But we are not sure if the device can handel a peak current at 62A when the junction temperature is below 125C. Can you please comment on the feasibility of such use of FF23MR12W1M1P_B11?
Also, what is the temperature TH in the datasheet: "DC drain current Tvj=175C, VGS=15V TH=80C ID,non 50A". Is it heatsink surface temperature? If so, oes this mean that we have to keep the heatsink surface temperature below 80C? What about the case temperature? Is it still 100C limited?
We work in the photovoltaic industry and need to test 24 module strings, operating at 1500Vdc./10A. In order to perform the tests, we have a 1500Vdc 1...
We work in the photovoltaic industry and need to test 24 module strings, operating at 1500Vdc./10A. In order to perform the tests, we have a 1500Vdc 15kW power supply, run from a generator, that will be connected to one string at a time and would need to switch between strings remotely (wireless).
The 24 channels would need to be switch LIVE, as wee will not be able switch the power supply on and off remotely.
Would it be possible to source SSR's/Mosfet's/IGBT's that would be able to switch the voltage and current required?
Assistance with specifying the components required, circuit and PCB board design would be greatly appreciated.
Dear Infineon Community,Could it be that there is an error in the thermal part of the SiC MOSFET models? When simulating for several tens of seconds t...
Dear Infineon Community,
Could it be that there is an error in the thermal part of the SiC MOSFET models?
When simulating for several tens of seconds the current out of the Tcase pin approaches ten times the power dissipation (Idrain*Vdrain-source) in the device, while a value equal to the power dissipation is expected. The temperature difference between Tj and Tcase also reflects a power of ten times the real power dissipation.
Please see the attached simulation circuit and results graph as png files, since Simetrix .sxsch files are not allowed.
SiC models from other brands do show the proper thermal response in this simulation circuit.
So I am either overlooking something obvious or there is something not fully correct in the IMW120R060M1H simulation model.