Radio Frequency (RF) Forum Discussions
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RF Transistors
Looking to design a low noise amplifier. Be it in sub GHz frequencies or higher frequencies up to 12 GHz. We have got you covered ! Infineon Technologies offers one of the widest portfolio of radio frequency transistors which offer exceptionally low NF, high gain, and high linearity at low power consumption levels. The transistors could be used in automotive applications (car antenna) , GNSS, Wireless infrastructure , mobile communication infrastructure , consumer appliances such as LCD TV, set-top boxes, industrial electronics such as automation, lighting , and the list goes on. Along with providing a wide portfolio, our products offer outstanding quality and reliability , assuring long term supply while still having an attractive price.
Antenna tuners
With the fast adoption of 5G technology, more antennas need to cover even more frequency bands within limited space. This can potentially affect antenna performance and result in higher design complexity. Antenna tuners help address these challenges to ensure fast and stable wireless connection everywhere. Infineon antenna tuners can be found in a variety of applications, such as smartphones, laptops, smartwatches, mobile routers, smart metering or asset tracking devices. In this forum, you can post your questions about Infineon antenna tuners and the coupler to find support from the community for your next project.
Low Noise Amplifiers
A low noise amplifier (LNA) amplifies a very low-power signal without significantly degrading its signal-to-noise ratio. When regular amplifiers amplify signals, additional noise is often introduced to the system. However, by using an electronic LNA, this noise can be significantly reduced. Infineon’s range of low noise amplifier ICs improve receiver sensitivity and thereby achieve the ultimate user experience. Our portfolio of MMIC RF LNAs is continuously updated to satisfy the ever-changing market requirements with custom made products for each application. Highly integrated in the smallest package, our LNA MMICs come with ESD protection and low power consumption, ideal for battery-operated mobile devices. What's more, our innovative SiGe technology delivers lower noise than silicon alternatives and performance comparable to more expensive GaAs counterparts.
RF Switches
These microelectronic components may be applied for antenna and frequency band selection to optimize an RF system in size, cost and performance. Infineon has a broad range of RF switch configurations and performance capabilities in terms of insertion loss, isolation, switching speed and power handling. Our CMOS RF switches are offered in very compact and robust packages ready to surface mount on PCBs.
Featured Discussions
BAS 52-02V,hand soldering,any good advice and steps to take,thanks!
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Show LessHello everybody, I have a few questions about Low Noise RF Transistors. Because I was looking for a small input amplifier for SiPM (Silicon Photomultiplier), I designed a common-base amplifier. The model is. BFS17WH6327XTSA1 and BFR182E6327HTSA1. The circuit diagram is shown below.
Figure 1
1. When I remove c26 and R21, power the circuit, no signal is plugged in, and self-oscillation occurs.
Figure 2
2. When I design an 8-channel circuit, the outputs of the 4 channels on the left are drawn and the outputs of the 4 channels on the right are shown in Figure 3. A SIPM ARRAY WAS TESTED WITH THE CIRCUIT AS SHOWN IN FIGURE 4. THE SIGNAL OF EACH LINE OF THE DEVICE IS DIVIDED INTO TWO OUTPUTS, SUBJECT INPUT TO THE LEFT AND RIGHT CHANNELS AS SHOWN IN FIGURE 5. When the 8 channels are all output suggestions, put on the SIPM but do not power it, and the power supply to the circuit will shock. As long as the output is less than or equal to 7 channels, there will be no oscillation, as shown in Figure 6
Figure 3
Figure 4
Figure 5
Figure 6
Is this a problem with the circuit problem or the PCB design?
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Show LessDear Team,
Kindly help to advise on EVB of BGSX22G6U10E6327XTSA1.
I recently purchased a BFR182WH6327XTSA1 RF transistor. I intended to use it for switching at the output terminal of an FPGA. I chose it based on its 8GHz spec, aiming to support my system's communication speed of 110MHz and 110Mbps. However, it's not performing as expected. Could anyone provide information on this product's switching time, such as rise and fall times? Also, I've noticed RF transistors' datasheets often don't include switching time details, unlike through-hole transistors. Is there a specific reason for this?
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Show LessI want to measure the rf power of two signals of 75MHz frequency.
can I measure the power of both signals one by one using this RF switch (BGS12P2L6) and a single RF power detector?
I tried to make a PCB (image attached) but I found that I did not get control over the common port RF to switch it from one port to another.
on changing the voltage level from 0 to 1.8 on the control port. I get signals on both ports.
level of signal is the same in both ports and becomes high when I apply 1.8V (on both ports)
May I Get an evaluation PCB for this RF switch?
Show LessI'm designing an RF pre-amp for an SDR radio 0-500MHz and used the NE46134 which is now obsolete.
If anyone knows a drop in replacement, or functional replacement, please let me know.
Thanks
Show LessHello everyone,
as for example the AS179-92LF, a SPDT switch up to 4 GHz, states that it is made of pHEMT GaAs FETs, there is no such information in the datasheet of the BGS14M8U9. Does anyone know if it is based on GaAs, GaN, Sic, FET or just MOSFET?
Apologies if that is something obvious, but I`m really new to semiconductors and material science.
Best regards
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