When are the external high-sides / low-sides turned on after a drain-source overvoltage detection?
When the status bits HSxDSOV or LSxDSOV are cleared, the half-bridge follows the content of HBxMODE.
Example 1:
1. HB1MODE = 01B: HS MOSFET is on
2. Then a VDS overvoltage is detected
- The half-bridge is turned off and the HS1DSOV status bit is set
- Note: the device keeps the content of HB1MODE unchanged to 01B, even if the HS1 is turned off
3. The DSOV status register is cleared
4. Since HB1MODE = 01B, then the external high-side MOSFET 1 is turned back on, following the content of HB1MODE
Example 2:
1. HB1MODE = 01B, HS MOSFET is on
2. Then a VDS overvoltage is detected
- The half-bridge is turned off and the HS1DSOV status bit is set
- The device keeps HB1MODE = 01B
3. The microcontroller sends a SPI frame which resets HB1MODE = 00B
4. Then the µC clears DSOV status register
5. Since HB1MODE = 00B, the external high-side and low-side MOSFETs stay off, following the content of HB1MODE, even if HS1DSOV is reset
