The VS/VSINT overvoltage brake is intended to protect the application, when a motor operates in generator mode.The operation in generator mode can occ...
The VS/VSINT overvoltage brake is intended to protect the application, when a motor operates in generator mode. The operation in generator mode can occur in several cases such as: - The motor rotation is caused by the application of an external torque, such as the manual closure of the trunk lid or of a sliding door - While the motor is activated by the half-bridges, then the MOSFETs are turned off without any active brake
In both cases, a current flows through the motor while the external half-bridges are off.
The motor current flows through the body diode of the external MOSFETs. If the charge pump is off, then the current cannot flow back to the battery. Instead, it charges the DC link capacitor, causing an increase of the VS voltage. If no measures are taken, VS can exceed the absolute maximum rating of some components, causing a damage of the module.
The VS/VSINT overvoltage brake feature monitors VS/VSINT, and turns on the low-side MOSFETs, even if the device is in sleep mode or if the charge pump is off. This action actively brakes the motor and stops the increase of the supply voltage, protecting the module. Show Less
TLE9210x - What is the value of CSA1L field in a situation where Rshunt is in series with motor and motor changes rotation direction?1. In a situation...
TLE9210x - What is the value of CSA1L field in a situation where Rshunt is in series with motor and motor changes rotation direction?
1. In a situation where you don't care about VDD sinking current it is the best option to leave CSAxL = 1 (default value). In this case one should just be aware of CSO settling time P_7.11.28. 2. In a situation where the customer does care about VDD sinking current, then they should wait around 10us before sampling ADC and refer to the datasheet for the value of sinking currents.
The static charge current ICHGST and the static discharge current IDCHGST for static activation are used for two purposes:1. These currents are used t...
The static charge current ICHGST and the static discharge current IDCHGST for static activation are used for two purposes: 1. These currents are used to charge and discharge the external MOSFETs, which are not controlled in PWM. These MOSFETs can be turned on and turned off faster than the MOSFET controlled in PWM, because the single activation is not relevant for the EMC characterization 2. IDCHGST is also used to turn off the MOSFETs in case of failure In case of a short circuit detection, two criteria must be considered for the configuration of IDCHGST: 1. the MOSFETs must be turned off fast enough in order to stay within the safe operating area of the MOSFETs, considering the possible high drain-source current 2. the MOSFETs may not be turned off too fast, because a high current in combination with stray inductances and a fast turn off can trigger a MOSFET avalanche That is the reason why IDCHGST is individually configurable for each half-bridge driver, so that these two criteria can be fulfilled for the considered MOSFET type.
How to treat unused gate drivers when the static brake or the VS overvoltage brake are used for the TLE9210x product family?SHx must be connected to G...
How to treat unused gate drivers when the static brake or the VS overvoltage brake are used for the TLE9210x product family?
SHx must be connected to GND if the following conditions are met: - The half-bridge is not used - And the corresponding external MOSFETs are not populated on the board - And the VS overvoltage brake or the static brake are used - And the passive drain-source overvoltage detection is activated The SHx of the half-bridges without populated MOSFETs must be connected GND to avoid a wrong drain-source overvoltage detection. Indeed, the device activates all low-sides MOSFETs during a VS overvoltage with bridge driver in passive mode event or when the static brake is activated. If an unused SHx is not connected to GND, then SHx is not pulled to low because of the unpopulated MOSFET. The floating SHx can result in VSHx – VSL > VVDSMONTHx_BRAKE and a drain-source overvoltage for the half-bridge HBx is detected. Then the device turns off all low-side MOSFETs because of the error detection.
The exposed pad and the substrate of the die are connected through a non-conductive glue.This exposed pad is there for cooling purposes only to allow ...
The exposed pad and the substrate of the die are connected through a non-conductive glue. This exposed pad is there for cooling purposes only to allow better power dissipation and shouldn't be used as an electrical GND. To achieve the best performance in respect to cooling performance it is recommended to connect the exposed pad to a GND plane on the PCB.
There is no risk in driving VDD and EN pin together from a single microcontroller I/O pin, since when EN =0 device is in Sleep mode and there is no ac...
There is no risk in driving VDD and EN pin together from a single microcontroller I/O pin, since when EN =0 device is in Sleep mode and there is no activity taking place inside of the device.
Rotation from HS2 to LS1: 1. SPI FRAME: 0b 1100 1101 0000 0000 0000 1001 – HB1MODE = 01b LS1 ON – HB2MODE = 10b HS2 ON
It is possible to omit the Brake step. In this case, one has to be aware that on the direction change Back EMF voltage will be added (with the same polarity) to the supply voltage. This will result in double the inrush current we observed at switch-on of the original direction (HS1-LS2). This means that the external circuitry and MOSFETs need to be dimensioned accordingly.
Are the charge pumps of the TLE92104 and TLE92108 still working in the case of fault condition?In case of a fault on a half-bridge driven by the devic...
Are the charge pumps of the TLE92104 and TLE92108 still working in the case of fault condition?
In case of a fault on a half-bridge driven by the device, the charge pump of the device continues working and supplying other half-bridges that are ON. The only conditions which deactivate the charge pump are: - Overvoltage on the supply voltage - Undervoltage on the supply voltage - Under voltage on the CP pin caused by the thermal shutdown
Is it possible to independently drive HS and LS stages of a single half-bridge for the TLE9210x?The HSx and LSx outputs of a single half-bridge cannot...
Is it possible to independently drive HS and LS stages of a single half-bridge for the TLE9210x?
The HSx and LSx outputs of a single half-bridge cannot be independently controlled by a TLE9210x, they are always operated in a half-bridge configuration. For a given half-bridge, e.g. HB1, if the HS gate output is on, the LS output is off, this applies in both static and PWM mode.