MOSFET (Si/SiC) Forum Discussions

お客様はIRS2109Sから2ED2109S06Fへ置き換えを検討しています。

１．
2ED2109S06Fに関して、INとSDのInternal Pull-up/Pull-downの値を教えて下さい。

２．
2ED2109S06F Datasheetのp4のBlock Diagramでは、SDは+5VにPull-upされています。
この+5VとはVccのことですか？
もし、Vcc＝12Vであれば、内部で12VにPull-upされますか？

お手数ですが、ご回答宜しくお願いします。

Hi,

I am looking for a mosfet which would be appropriate for essentially DC switching of a 400V 7A continuous load.   Low RDS on is preferred as I have limited ability to remove heat easily.

I'm currently using Mosfet IRL60SL216 trise in datasheet is only 180ns but when i use gate driver IR2110PBF, t rise measured is more than 1500ns as in picture, why is trise is so long, is datasheet or mosfet is fall?

Hello

We are using the P channel MOSFET IRLM5103 two switch the 12V for the analog Application. the voltage is switched from Source to drain when the MOSFET is ON.  Also when there is 154V volt at the input (Drain) then there will be 12.5V constant at the output (Source) of the depletion mosfet. due to which the the body diode of the IRLM5103 will be the forward biased and the some of the current will flow to the +12V source. how much current will flow through the body diode when that body diode will forward biased ? what will impact on the +12 Source ?

I have attached the schematic of the application.

Hi!

We have IAUS240N08S5N019 transistor with the next marking on package "5N08019" (see photo below). According to the datasheet, IAUS240N08S5N019 model should have a package marking "A08S5N19". Package appearance and dimensions same as PG-HSOG-8-1. But "5N08019" marking corresponds IAUT240N08S5N019 model in PG-HSOF-8-1 package. Please tell me where is the mistake? Did we get a counterfeit?

I am planning to use this MOSFET BSC026N08NS5 for my one of the Power Redundancy circuit, i just wanted to know if this MOSFET can be used for Automotive Application. The operating temp range of this MOSFET given in Datasheet is -55'c to 150'c.