MOSFET (Si/SiC) Forum Discussions

I'm designer of Power supply DC-DC using H-Brigde topology, I use MOSFET IRL60SL216 and Gate Driver IR2110PBF, the problem is when H-Brigde is no load Vgs = 10-12V, Rg=4.7Ohm ,duty Vds is always 0.5 although duty Vgs is 0.2, 0.3 or 0.4 . Only when I connect load to H-Brigde the Vds is follow Vgs duty. I don't know why cause this. Thank

 Please advise us which OPN is recommended for New plan.

The selection sonditions are as follows.

・FET or SiCFET

・Around 600V

・DPAK, D2PAK that can be used for surface mounting

Regards,

Hello

We are using the P channel MOSFET IRLM5103 two switch the 12V for the analog Application. the voltage is switched from Source to drain when the MOSFET is ON.  Also when there is 154V volt at the input (Drain) then there will be 12.5V constant at the output (Source) of the depletion mosfet. due to which the the body diode of the IRLM5103 will be the forward biased and the some of the current will flow to the +12V source. how much current will flow through the body diode when that body diode will forward biased ? what will impact on the +12 Source ?

I have attached the schematic of the application.

Dear Sir,

I have question about how to use Coss of SIC MOSFET to calculate right Qoss?

Is there use Qoss = Coss*VDS@600V math formula? please advise.

Hi!

We have IAUS240N08S5N019 transistor with the next marking on package "5N08019" (see photo below). According to the datasheet, IAUS240N08S5N019 model should have a package marking "A08S5N19". Package appearance and dimensions same as PG-HSOG-8-1. But "5N08019" marking corresponds IAUT240N08S5N019 model in PG-HSOF-8-1 package. Please tell me where is the mistake? Did we get a counterfeit?

I am planning to use this MOSFET BSC026N08NS5 for my one of the Power Redundancy circuit, i just wanted to know if this MOSFET can be used for Automotive Application. The operating temp range of this MOSFET given in Datasheet is -55'c to 150'c.

Dear IFXer,

In mosfet middle voltage process, may I know the following technology name are same process? because I saw the internal structure are very similar.

Split Gate (SGT)
Trench Field Plate
Shield Gate Trench