Recent discussions
I'm designer of Power supply DC-DC using H-Brigde topology, I use MOSFET IRL60SL216 and Gate Driver IR2110PBF, the problem is when H-Brigde is no load Vgs = 10-12V, Rg=4.7Ohm ,duty Vds is always 0.5 although duty Vgs is 0.2, 0.3 or 0.4 . Only when I connect load to H-Brigde the Vds is follow Vgs duty. I don't know why cause this. Thank
Show LessPlease advise us which OPN is recommended for New plan.
The selection sonditions are as follows.
・FET or SiCFET
・Around 600V
・DPAK, D2PAK that can be used for surface mounting
Regards,
Show LessHello
We are using the P channel MOSFET IRLM5103 two switch the 12V for the analog Application. the voltage is switched from Source to drain when the MOSFET is ON. Also when there is 154V volt at the input (Drain) then there will be 12.5V constant at the output (Source) of the depletion mosfet. due to which the the body diode of the IRLM5103 will be the forward biased and the some of the current will flow to the +12V source. how much current will flow through the body diode when that body diode will forward biased ? what will impact on the +12 Source ?
I have attached the schematic of the application.
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Can you provide Eon/Eoff
if possible
thank you
Dear Sir,
I have question about how to use Coss of SIC MOSFET to calculate right Qoss?
Is there use Qoss = Coss*VDS@600V math formula? please advise.
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Hi!
We have IAUS240N08S5N019 transistor with the next marking on package "5N08019" (see photo below). According to the datasheet, IAUS240N08S5N019 model should have a package marking "A08S5N19". Package appearance and dimensions same as PG-HSOG-8-1. But "5N08019" marking corresponds IAUT240N08S5N019 model in PG-HSOF-8-1 package. Please tell me where is the mistake? Did we get a counterfeit?
Show LessThis is a SiC MOSFET AIMW120R045M1 switching characteristics test circuit:
And AIMW120R045M1 switching characteristics SPEC:
My question is how to setup Id=20A at Inductive load test circuit?
Show LessI am planning to use this MOSFET BSC026N08NS5 for my one of the Power Redundancy circuit, i just wanted to know if this MOSFET can be used for Automotive Application. The operating temp range of this MOSFET given in Datasheet is -55'c to 150'c.
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Dear IFXer,
In mosfet middle voltage process, may I know the following technology name are same process? because I saw the internal structure are very similar.
Split Gate (SGT)
Trench Field Plate
Shield Gate Trench
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ICE3PCS01GのOVP時の挙動について教えていただけないでしょうか。
OVP1/2は、指定したOVP電圧に達すると即時PWM OFFする機能と理解しています。
この場合、負荷変動等により瞬間的にバス電圧が上昇した際、OVPによるPWM停止→バス電圧低下による復帰が繰り返されるかと思います。
その際に可聴ノイズを発生を懸念しています。
データシート上では設定できる周波数はminで22kHzとなっております。
しかしながらPWM sectionではDminが0%となっております。
上記のような可聴ノイズの発生する周波数となる可能性はございますでしょうか。
また、もしこれに対して何か対策があるのであればご教示いただけないでしょうか。
他社品ではこの現象の対策として、バス電圧の変化が大きいときはゲインを変化させ即時に出力電圧を安定させる機能が他社にはあるようです。
富士電機:ダイナミックOVP
TI:Enhanced Dynamic Response (EDR)
以上です、よろしくお願いいたします。
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