MOSFET (Si/SiC) Forum Discussions
When the 2ED21824S06J is used as the driver and the MOS model IRFS4227TRLPBF is selected, the oscilloscope will show sinusoidal burrs. When the peripheral conditions are consistent, the MOS tube is replaced with IGBT, and the model IKB20N60H3 will not have this kind of burr. What could be the cause of this phenomenon?
The schematic diagram and waveform are shown in the attachment
I am performing double pulse tests on the IMZA120R007M1H and noticed my turn off energy in particular did not match the datasheet. I am using a Tektronix rogowski coil and HV diff probe on the FET. The parameters are an 800V bus, 8uH inductor, and a 1 us pulse to produce roughly 100A. The gate drivers go between -3 and 15V, and the gate resistance is 1 Ohm. I am getting 1.9mJ instead of the low hundreds of uJ expected from the datasheet.
The datasheet also lists Efr the "forward recovery" energy. I'm not familiar with this term but based on the reverse recovery, is it the energy that the diode expends when switching on? Then would it be measured in the DPT? Should I add the Efr and Eoff together?
Thanks for your helpShow Less
The simulation platform I built uses Infineon's module.
In SPWM mode, the simulation results are basically the same as the IPOSIM simulation results. The switching losses are all 174W, and the conduction losses are basically the same.
However, in SVPWM mode, there is a big difference in the switching loss comparison between the simulation results and the IPOSIM simulation results. My switching loss is 174W.
However, the IPOSIM results are around 100W, and the conduction loss is basically the same. What is the problem with the difference in switching losses? Please give me some advice!!
I am performing the radiation analysis of a product implementing the IRHG567110 and would nee to know its sensitive depth in order to be able to assess its sensitvity to SEGR/SEB. Could you please provide me this confirmation?
Thanks and best regards
We've been using the FF3MR12KM1 power modules for a design. It appears they are discontinued. Is there an updated/newer version that's both mechanically a drop in replacement as well as an electrical drop in with minimum or acceptable differences?Show Less
If everything remains the same after the IRF5210 is on the machine, other than the short circuit caused by excessive current, there will be no response to the short circuit phenomenon
Is there a LTSpice simulation model for P-Ch(SuperSO8 5×6) FET?
I can't find it on the web page and would like to have a LTspice model of the following 4 product names.
The one I received before was a model for PSpice.Show Less
Using LTSpice (x64) Version 17.1.15
I've downloaded the OptiMos Library following: Infineon-OptiMOS_PowerMOSFET_PSpice_80V_N-Channel-SimulationModels-v03_00-EN and using the following library: StrongIRFET_80V_LTSpice.lib
When adding the following part to a simulation: IPB016N08NF2S_L1
I receive the following error: 'Undefined subcircuit: S5_80_f2_var'
...I have referenced the 'How to fix common errors in LTspice model simulation' here in the forum and it suggests the following: "To run the same model in LTspice, contact technical support team for the modified version of the file."
I've submitted a request to Technical support, yet I thought I'd post here as well to see if anyone can confirm if I am missing something...
Thank you in advance,