The dead time of SiC half-bridge setting

[Jeff_Huang]

Hi,Sir,

About minimum dead time setting, I already know the calculation and setting method of IGBT device. 

For minimum dead time  of SiC device,are there any differences and matters needing special attention compared with IGBT? Do you have a more detailed description, such as providing a document to introduce it? Thank you for your support.

BR,

Jeff Huang

[Guru_Prasad · Accepted solution]

Hello @Jeff_Huang 

Thanks for posting the question in the Infineon community.

The SiC half-bridge dead-band time setting process is the same as the IGBT half-bridge dead band. Since SiC

devices are high frequency devices the time value  would be lower for Sic devices compared to IGBT device. 

Please refer below article for more information

https://community.infineon.com/t5/Knowledge-Base-Articles/Dead-time-calculation-for-Insulated-Gate-B... 

Thanks 

Guru_Prasad