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MOSFET (Si/SiC) Forum Discussions

xiaochuang
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When the MOS transistor spw55n80c3 was opened, the rising speed of the driving waveform was slow. It took 400ns to stay at Maitreya platform, resulting in serious MOS transistor heating. The currently selected driving chip is mic4452, and the driving capacity can reach 12a. In addition, could you send some usage and driving routines of the MOS transistor spw55n80c3? Thank you very much

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Jingwei
Moderator
Moderator 100 sign-ins 50 replies posted 25 solutions authored
Moderator

Hi xiaochuang,

Thanks for using Infineon Community.

你可以使用中文进行提问和沟通。

在这里我先列出几个影响开关速度的因素,请您自行先检测一下。

1. Ld,这个参数是mos drain端的寄生电感。这个寄生电感如果过大,会影响在米勒平台中,VDS下降的速度,进而影响开关速度。

2. Rg和Lg,是栅极的栅极电阻与寄生电感,这个会影响驱动电流。尝试减小Rg和缩短驱动信号回路,来增加驱动电路的驱动能力。

3. Ls,这个是源极的寄生电感。真实的驱动电压是Vdrive-VLs,VLs也会直接导致导通变慢。

4. Ig,尝试捕捉Ig信号,确保驱动能力足够。

请注意,上面提到的四个点,直接影响了驱动速度和米勒平台时长。请逐一排查,不能确定数值的比如:Ls,也请尝试捕捉VLs信号,来确保不会干扰到正常的驱动。

附件中是一份MOS驱动指南。请查看。

Best Regards,

Steven

View solution in original post

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1 Reply
Jingwei
Moderator
Moderator 100 sign-ins 50 replies posted 25 solutions authored
Moderator

Hi xiaochuang,

Thanks for using Infineon Community.

你可以使用中文进行提问和沟通。

在这里我先列出几个影响开关速度的因素,请您自行先检测一下。

1. Ld,这个参数是mos drain端的寄生电感。这个寄生电感如果过大,会影响在米勒平台中,VDS下降的速度,进而影响开关速度。

2. Rg和Lg,是栅极的栅极电阻与寄生电感,这个会影响驱动电流。尝试减小Rg和缩短驱动信号回路,来增加驱动电路的驱动能力。

3. Ls,这个是源极的寄生电感。真实的驱动电压是Vdrive-VLs,VLs也会直接导致导通变慢。

4. Ig,尝试捕捉Ig信号,确保驱动能力足够。

请注意,上面提到的四个点,直接影响了驱动速度和米勒平台时长。请逐一排查,不能确定数值的比如:Ls,也请尝试捕捉VLs信号,来确保不会干扰到正常的驱动。

附件中是一份MOS驱动指南。请查看。

Best Regards,

Steven

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