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Hi IFXer,
SI/SIC MOSFETs all generate parasitic diodes through internal P+ - N- - N+ (PiN),
But why the reason for the lower Qrr of SIC MOSFET ?
Is it because the N-epitaxial layer of the SIC MOSFET is thinner (low resistivity), when the body diode is off, it can have a faster recombination effect, resulting in lower stored charge (Qrr)?
kind regards,
Kuo
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Hi
yes you are right it is due to the thinner depletion region as compared to normal Si mosfet which has wide depletion region causes extensive reverse recovery charge (QRR), which limits their usage in hard-switching configuration. also in Sic parasitic capacitance is also less as compared to Si, due to which there is less charge to discharge during turn off.
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Hi there,
do you have any specific part number in mind, ?
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Hi
yes you are right it is due to the thinner depletion region as compared to normal Si mosfet which has wide depletion region causes extensive reverse recovery charge (QRR), which limits their usage in hard-switching configuration. also in Sic parasitic capacitance is also less as compared to Si, due to which there is less charge to discharge during turn off.