Tip / Sign in to post questions, reply, level up, and achieve exciting badges. Know more

MOSFET (Si/SiC) Forum Discussions

LIAO
Level 1
5 sign-ins First question asked First like given
Level 1

This is a SiC MOSFET AIMW120R045M1 switching characteristics test circuit:

LIAO_1-1659506476306.png

 

And AIMW120R045M1 switching characteristics SPEC:

LIAO_2-1659506563287.png

My question is how to setup Id=20A at Inductive load test circuit?

0 Likes
1 Solution
Rachel_Gao
Moderator
Moderator 10 solutions authored First like received 50 sign-ins
Moderator

Hi 

Welcome to Infineon Developer Community,

As shown in figure E,we need to adjust switching on time(Ton) of DUT to achieve Id=20A,according to the formula: di=V/L*dt.   If you have any further questions,please contact me.

Best regards,

Rachel

View solution in original post

1 Reply
Rachel_Gao
Moderator
Moderator 10 solutions authored First like received 50 sign-ins
Moderator

Hi 

Welcome to Infineon Developer Community,

As shown in figure E,we need to adjust switching on time(Ton) of DUT to achieve Id=20A,according to the formula: di=V/L*dt.   If you have any further questions,please contact me.

Best regards,

Rachel