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I was using n channel power mosfet
AUIRFP4110.
by applying Vgs=12 V (in series with 1k resistor) , Parallel resistance between GS was 1K(for fast switching), Vds=50 V .
Mosfet was working fine till 5 Amp load & switching was too good but when I switched the load to 10 Amp ; the mosfet got blown up immediately. Testing scenario was within the specified range as per datasheet ; please let me know your valuable thoughts to rectify this problem.
Regards,
Ankit Singh
Solved! Go to Solution.
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Hi Ankit,
Problem summary as per the discussion we had with you :
MOSFET (AUIRFP4410) blown up while loaded at 10A it was working fine when loaded with 5A. No frequency involved it was one time Turn-ON. Load increased with Rheostat.12VDC Applied to gate through Rg - 1k, Rgs- 1k. Vds- 50V. heat sink details -Unknown. please correct if anything is wrong.
This could be the Possible cause .
Rg and Rgs will act as Voltage Divider, Effective voltage at gate would be 6V, lesser the gate voltage higher the Rds-on, which will generate more heat. MOSFET may fail if there is no heatsink used.
Solution: Rg value should be reduced and add a suitable heatsink. Pls Refer Gate resistor selection.
We can figure out exact issue if you share test setup detail and Vgs, Vds voltage waveform.
Regards,
Vignesh kumar
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Hi Ankit,
Thanks for posting in Infineon community.
Could you please share driver detail and frequency of operation?
Regards,
Vignesh kumar.
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through 1k resistor.
--
Best Regards,
Ankit Singh
Electrical Engineer
Phone no. - (+91)9458707512
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Hi Ankit,
Problem summary as per the discussion we had with you :
MOSFET (AUIRFP4410) blown up while loaded at 10A it was working fine when loaded with 5A. No frequency involved it was one time Turn-ON. Load increased with Rheostat.12VDC Applied to gate through Rg - 1k, Rgs- 1k. Vds- 50V. heat sink details -Unknown. please correct if anything is wrong.
This could be the Possible cause .
Rg and Rgs will act as Voltage Divider, Effective voltage at gate would be 6V, lesser the gate voltage higher the Rds-on, which will generate more heat. MOSFET may fail if there is no heatsink used.
Solution: Rg value should be reduced and add a suitable heatsink. Pls Refer Gate resistor selection.
We can figure out exact issue if you share test setup detail and Vgs, Vds voltage waveform.
Regards,
Vignesh kumar