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GaN Forum Discussions

Kelly_Yu
GaN
As we known,There are Two types of GaN hemt,one is  GIT,the other is SG,so,how can I confirm which type of the device choose from datasheet. THX SOOO ... Show More
Granada203028
GaN
Half bridge circuit driving pure inductive load. 400V DC 12A pk. GS66508T 31mA draw so circuit power 12.6W. IGT60R070D1ATMA1 114mA, 45.6W. IGT60R070D1... Show More
乱世煮酒论天下
GaN
7管或者6管封装的IGBT模块安装在变频器上,如果想要测试他的输出相间之间的绝缘水平,IGBT模块是否支持输出相间绝缘测试,或者测试的条件是什么?以英飞凌1200V150A模块为例,输出相间绝缘测试,UVW两两之间绝缘水平应该加多大的直流电压?如果要测量模块输入对地PE之间的绝缘能力,又应该怎么样测... Show More
lixuancheng
GaN
I have designed a buck-boost circuit using the 1EDI20N12AF to drive the IGT60R070D1. When the load is 1kΩ, the circuit operates normally until the inp... Show More
Translation_Bot
GaN
Zhihu link: https://www.zhihu.com/question/62128695/answer/3206051387#comment-10724674979?notificationId=1705919527278313472  smartconx_target@Q!w2e3r... Show More
lixuancheng
GaN
"I designed a bidirectional buck-boost circuit combining 1EDI20N12AF and IGT60R070D1 based on their datasheets. However, there are some issues with th... Show More
Naghavi
GaN
I wanted to know if Infineon has any kind of Multi-Project Wafer (MPW) program on the GaAs and GaN processes. If yes, what is the web link for the tap... Show More
AkiTmt3
GaN
Hello EVAL_2500W_PFC_GAN_AThe initial setting of the output voltage is 390V, but plan to use it at 380V.Could you tell me how to change parts?(Please ... Show More
Benedict
GaN
Hi, not sure if this is the correct forum for this question. The product is from GaN Systems, who I understood was recently acquired by Infineon. I pr... Show More
usroutITRI
GaN
As it is mentioned in the product status "on request" for the EVAL_3K6W_LLC_GAN(UG_201702_PL52_013). So I want to know the lead time of the product an... Show More
Forum Information

GaN

Infineon’s CoolGaN™ is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V. The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market. Switched-mode power circuits using CoolGaN™ can benefit from the improved energy efficiency and the improved power density, which is not possible with state-of-the-art silicon devices. In this forum, you can post your questions, comments, and feedback about CoolGaN™ devices and their applications.