Announcements

Live Webinar: Solving the challenges in xEV power conversions | March 7 @9am & 5pm CET. Register now!

Tip / Sign in to post questions, reply, level up, and achieve exciting badges. Know more

cross mob
lock attach
Attachments are accessible only for community members.
Miyata
Level 4
Level 4
Distributor - TED (Japan)
25 replies posted 10 solutions authored First like given

My customer want to know the IGT60R070D1's VGS max value.  If I look into the data sheet, these is no value specified.  Competitor GaN System has a similar performance to IGT60R070D1, part number GS-065-060-5-B-A has a VGS max value of +7V and +10V@<1 us.    Pls get back to me with your answer.

0 Likes
1 Solution
Pablo_EG
Moderator
Moderator
Moderator
First question asked 250 sign-ins 250 replies posted

Hello Miyata-san,

Unlike traditional MOSFETs, CoolGAN technology is not insulated, therefore it does not have a gate dielectric breakdown voltage.
Instead, as the ohmic p-gate forms a diode, it is forward biased by driving it forward.
CoolGAN technology is current driven.
This means that the gate voltage will be a function of this gate current, as well as the drain current.

From App Note

"The gate voltage in the forward direction is a function of both gate current and drain current."
"Therefore, the datasheet does not specify a forward gate voltage limit, only a forward current limit."

Pablo_EG_0-1642378732075.png

When assessing the safety of CoolGAN devices, the gate voltage is not the key factor, but gate current is.
As long as the gate current limit is assured, there will be no gate failure.

Please understand that CoolGAN is an advanced technology that has key differences from traditional MOSFET technology.

Best regards,
Pablo

View solution in original post

0 Likes
1 Reply
Pablo_EG
Moderator
Moderator
Moderator
First question asked 250 sign-ins 250 replies posted

Hello Miyata-san,

Unlike traditional MOSFETs, CoolGAN technology is not insulated, therefore it does not have a gate dielectric breakdown voltage.
Instead, as the ohmic p-gate forms a diode, it is forward biased by driving it forward.
CoolGAN technology is current driven.
This means that the gate voltage will be a function of this gate current, as well as the drain current.

From App Note

"The gate voltage in the forward direction is a function of both gate current and drain current."
"Therefore, the datasheet does not specify a forward gate voltage limit, only a forward current limit."

Pablo_EG_0-1642378732075.png

When assessing the safety of CoolGAN devices, the gate voltage is not the key factor, but gate current is.
As long as the gate current limit is assured, there will be no gate failure.

Please understand that CoolGAN is an advanced technology that has key differences from traditional MOSFET technology.

Best regards,
Pablo

0 Likes