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Stone-Mao
Level 1
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如何减小SiC MOSFET开关时由于di/dt导致较大电压尖峰?有没有具体方案或者案例参考?

1 解答
Vicky_S
Moderator
Moderator
Moderator
50 solutions authored 10 likes received 5 likes given

Hello,
1. CoolSiC™ Mosfet provides good control of switching transients by the gate resistor value. By increasing the gate resistance di/dt and dv/dt of the device can be reduced which mitigates the spikes and ringing. However, the penalty is of increased switching loss.

2. Improving the layout : By optimizing the power path of the circuit, parasitic inductance of the path can be reduced and thus spikes and ringing.

译文:
1.CoolSiC™ Mosfets 可通过栅极电阻值对开关瞬态进行出色的控制。通过增加栅极电阻,可以降低器件的 di/dt 和 dv/dt 值,从而减少尖峰和振铃。然而,这样做的代价是增加开关损耗:通过优化电路的电源路径,可以降低路径的寄生电感,从而减少尖峰和振铃

CoolSiC™ 1200 V SiC MOSFET Application Note  请参阅更多详情;

Best regards,
Vicky S

在原帖中查看解决方案

3 回复数
Vicky_S
Moderator
Moderator
Moderator
50 solutions authored 10 likes received 5 likes given

Hello,
1. CoolSiC™ Mosfet provides good control of switching transients by the gate resistor value. By increasing the gate resistance di/dt and dv/dt of the device can be reduced which mitigates the spikes and ringing. However, the penalty is of increased switching loss.

2. Improving the layout : By optimizing the power path of the circuit, parasitic inductance of the path can be reduced and thus spikes and ringing.

译文:
1.CoolSiC™ Mosfets 可通过栅极电阻值对开关瞬态进行出色的控制。通过增加栅极电阻,可以降低器件的 di/dt 和 dv/dt 值,从而减少尖峰和振铃。然而,这样做的代价是增加开关损耗:通过优化电路的电源路径,可以降低路径的寄生电感,从而减少尖峰和振铃

CoolSiC™ 1200 V SiC MOSFET Application Note  请参阅更多详情;

Best regards,
Vicky S

Stone-Mao
Level 1
Level 1
First reply posted First like given First like received

非常感谢!

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Vicky_S
Moderator
Moderator
Moderator
50 solutions authored 10 likes received 5 likes given

Hello @Stone-Mao ,
If provided answer resolves your query then, we request you to click on accept as a solution.
译文: 如果所提供的答案解决了您的问题,请点击接受作为解决方案。

Thank you, 
Vicky S

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