OptiMOS™ 5 150V MOSFETs Technical Training

[Academy]

In this training you can see improvements of the main MOSFET parameters in comparison to competitors and previous OptiMOS 3:

• ON resistance RDS(on) -> reduces ON losses;
• Reverse recovery charge Qrr ->increases diode commutation ruggedness;
• Threshold voltage VGSth,min -> reduces risk of induced parasitic turn-on;
• Figures-of-merit -> e.g. FOMg, FOMgd, FOMoss, beneficial in high frequency applications.

As well you can observe special relevance in applications like LVDrives, telecom, solar.