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OptiMOS™ 5 150V MOSFETs Technical Training

OptiMOS™ 5 150V MOSFETs Technical Training

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In this training you can see improvements of the main MOSFET parameters in comparison to competitors and previous OptiMOS 3:

  • ON resistance RDS(on) -> reduces ON losses;
  • Reverse recovery charge Qrr ->increases diode commutation ruggedness;
  • Threshold voltage VGSth,min -> reduces risk of induced parasitic turn-on;
  • Figures-of-merit -> e.g. FOMg, FOMgd, FOMoss, beneficial in high frequency applications.

As well you can observe special relevance in applications like LVDrives, telecom, solar.