Tip / Sign in to post questions, reply, level up, and achieve exciting badges. Know more

cross mob

How to drive SiC MOSFETs reliably

How to drive SiC MOSFETs reliably

Academy
Employee
Employee
100 likes received 50 likes received 25 likes received

By component level thinking, the datasheet of a SiC MOSFET shows several VGS limitations which prevent users from over-driving and causing gate threshold voltage drift in long term operation.​​

A negative driving voltage is often recommended by other SiC MOSFET vendors as the gate threshold voltage of planar SiC MOSFETs is lower than in Infineon's CoolSiC™ MOSFETs.

Infineon does not recommend driving CoolSiC™ with negative voltage, but offers an efficient solution to guarantee the reliability of the SiC MOSFET in long term operation. Stay tuned to learn more! 

Watch this training to:

- Learn the correct way to design a gate driver circuit of SiC MOSFETs by understanding;

- Discover the gate driving limitation in SiC MOSFETs;

- Understand the reason for gate driving limitation parameters in datasheets;

- See the VGS waveform issue in real applications;

- Get to know the possible solution to overcome those issues and improve the reliability.

How to drive SiC MOSFETs reliably.png

0 Likes
71 Views
Authors