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Basics of GaN power devices: Material, design and reliability

Basics of GaN power devices: Material, design and reliability

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Wide bandgap semiconductors such as Gallium nitride (GaN) offer fundamental advantages over silicon. In particular, the higher critical electrical field makes them very attractive for power semiconductor devices with outstanding specific on-state resistance and much smaller capacitances compared to silicon MOSFETs. Not only because of the resulting power savings and total system cost reduction, wide bandgap semiconductors also allow higher operating frequencies​.

Watch following training to get to know basics of GaN Power Devices. Lets speak about material, design and reliability!

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