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Dear All.
I'm using TLE4999c8 with development kit. (Eval kit vers: 2.1.1.40222).
When I flash EEPROM, no issue. When I tried to enable the 3.3V parameter, it lead to EEPROM fail (wrong values of several parameter such as Gain & Offset).
My UT is 1µs, so according user manual, 3.3V can be enable.
Attached is the dump without and with 3.3V parameter. Have you already had same issue?
Thank you for your support.
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Hello.
Thank you for your reply.
In fact I'm not using this board. TLE4999C8 are directly connected to the eval board. I have a PCBA with TLE4999C8 and CL capacitor between pin 4 & 3 of TLE. The capacitor value is 470pF (so less than what is required for 1µs UT).
I only have issue for EEPROM programing when 3.3VEN parameter is enable.
Thank you.
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Hi @JTEKTGui,
Can you please attach the image of your setup/ application circuit once, it will be helpful.
And you are programing EEPROM through GUI, right?
Regards,
Sunil.
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Here is picture of the setup. (I'm programing EEPROM with the GUI).
For the application circuit, it is the same as in datasheet of IC. and Capacitor value on the bus line is about 470pF.
When I enable 3.3V function and try to burn EEPROM, it failed.
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Hi @JTEKTGui ,
As shown in the image below, for 3.3 V EN feature the SPC unit time should be greater than 1 µs (UT ≥ 1).
Also, according to the application circuit implementation, the bus line capacitor should be 2.2 nF for
UT ≥ 1us, which is not close to 0.47 nF (your implementation).
Note the pull-up resistor RP, which is typically 2.2 kΩ.
Regards,
Sunil.