Smart Power Switches Forum Discussions
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Using BTS50080-1TEA.
With Pin2 & Pin3 at 12V I see 2.3v at Pins 1 & 5.
When I bring Pin2 to ground I get the full 12v as at Pin3.
Why do I see 2.3v at Pin1 & Pin5 when Pin 2 is high?
Nick
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Hello Supporter.
As the title suggests, the high side switch ITS4140N is silkscreened as IT4140, and the picture of the chip in the datasheet doesn't provide a picture of the silkscreen on the physical IC.
Is there a corresponding document stating that the ITS4140NIC in the datasheet is the chip with the IT4140 silkscreen on the IC?
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/%E6%99%BA%E8%83%BD%E7%94%B5%E6%BA%90%E5%BC%80%E5%85%B3/%E4%B8%BA%E4%BB%80%E4%B9%88%E9%AB%98%E8%BE%B9%E5%BC%80%E5%85%B3ITS4140N-%E8%8A%AF%E7%89%87%E4%B8%8A%E7%9A%84%E4%B8%9D%E5%8D%B0%E6%98%AF-IT4140/td-p/497436
Show Lesszhege
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Show LessWe are using 2ED2410-EM ic for BMS project ,
We are using common Drain mosfet for this project in which -
INT,EN,INA,INB,CPN pins are pull up,
CPP ,CS01 & CS02 pull down with 82K with ground pin,
RS pin connect with 10E resistor with ground,
TMPO , TMP , DG0 ,DG1 float
ISP1&2 and ISN1&2 connect with shunt as per given in datasheet
When we connect ISP1&2 pin to Vs pin and IPN1&2 to GND pin then this IC works well and switch mosfet gate voltage is 12 volts, but when we connect this pin with shunt resistor to find out the current direction as given in the datasheet. If we use this we do not get any voltage on the MOSFET gate pin.
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This BTS7004-1EPP, the output is connected to the DC motor driver chip, and then to the motor, in that case, this RGND removed and directly grounded will work, right? Thank you!
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Hello
< I would have post again to correct mt TYPO, sorry.>
Customer intend to use BTS428L2 for next model.
Customer want to estimate BTS428L2 Nominal load current at Tc=60 deg-C.(not 85-deg-C)
In the data sheet of BTS428L2, ILoad=5,8A(MIN) at Tc=85 deg-C.
Customer let case temp 60deg-C, in order to increase load current ILoad=6.5A( this is customer's goal).
Anyway,
I had found application note below ** , and found Fig.36 Relative Rdson vs Tj.
I see Coeff = 71 at Tc= 85 deg-C. And also, Iload =5.8A(MIN).
I also see Coeff =61 at Tc=60 deg-C.
==>
Therefore, I think Iload at Tc=60 deg-C is,
So, Iload at 60degC is IL = 5.8A(85deg-C) / ( 61/71) = 6.75A.
Is this wrong?
I would have your advice.
Best Regards
****
Application Note: Smart High side switches
https://www.infineon.com/dgdl/Infineon-Application+Note-PROFET+12V-What+the+designer+should+know-AN-v01_00-EN.pdf?fileId=5546d46259b0420a0159d5c957260d9c
****
Hello Infineon engineers:
Can you please tell me about the chip manual ESD metrics for high side switches, in the BTS7040, why is it that in P_4.1.0.21 you have gotten the ESD capability of each pin to be 2kV, but in P_4.1.0.22 the ESD capability to OUT becomes 4kV when GND is connected to VS? What is the difference between this and the ESD capability of OUT to GND or VS alone? Can't figure out how such an operation would double its ESD capability.
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Show LessHi,
We are using BTT6010-1ERA as HSD in one of our project, where open load detection at inactive condition is a requirement.
it is mentioned in datasheet of BTT6010-1ERA as below
- Open load detection threshold in OFF state (VS - VOL(OFF)) is 4 to 6 volt
Need more clarity on above points, our understanding is as below.
- in order to detect open load condition @ off state, voltage difference between Vbat and VOL(OFF) should be 4 to 6 volt.
- For example Vbat = 24V and VOL(OFF) = 19V ,Then 24-19 = 5 ( satisfies the openload threshold detection condition)
Requesting to clarify whether our understanding is right or wrong.
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