Robustness of DS/VS in NVRAM (Serial Flash)

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Anonymous
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Per this post: robustness of DS/VS in NVRAM

I am using serial flash, and it losts VS data when power is corrupted.

Does the automatic WP control apply to only DS?

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VS (Volatile Section) = Data to be modified by the application. Ex. paring information or the application’s private data.

DS (Data Section) = Application’s executable binary image.

If the Serial FLASH loses power during a write cycle, then VS data could be lost.

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MichaelF_56
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VS uses checksums.  Regardless, some data (that is being written) could be lost during a power outage.

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Anonymous
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mwf_mmfae,

Could you please give me more details?

I can not understand fully why the data in VS can be lost due to power corruption like short.

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Anonymous
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Hello EY AN,

If the Serial FLASH loses power during write cycle then the data will be lost.

Thanks,

JT

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Anonymous
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JT,

I think so, but DS data was not lost although VS was lost.

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VS (Volatile Section) = Data to be modified by the application. Ex. paring information or the application’s private data.

DS (Data Section) = Application’s executable binary image.

If the Serial FLASH loses power during a write cycle, then VS data could be lost.

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