SRAM Forum Discussions
Hello,
Do you know if there is SEE testing data available for the CY7C185 SRAM?
-Chris
Hi Team,
I am working on CY62157EV30LL 45ZXi SRAM chip on imx53 processor connected through EIM interface.
1.When I write data , it hsows as written proper data but when reading it shows same 2 byte data reading for other 2 bytes also.
Example, 0x12345678 is written , when read backs it shows as 0x12341234
2. When I read for next address and so on , it shows the previously read value only like 0x12341234 as shown below
debian@arm:~$ sudo ./devmem2 0xf0000000 w 0x12345678
/dev/mem opened.
Memory mapped at address 0xb6fed000.
Value at address 0xF0000000 (0xb6fed000): 0xABCDABCD
Written 0x12345678; readback 0x12341234
debian@arm:~$
debian@arm:~$
debian@arm:~$
debian@arm:~$ sudo ./devmem2 0xf0000000
/dev/mem opened.
Memory mapped at address 0xb6ff0000.
Value at address 0xF0000000 (0xb6ff0000): 0x12341234
debian@arm:~$
debian@arm:~$
debian@arm:~$
debian@arm:~$
debian@arm:~$ sudo ./devmem2 0xf0000004
/dev/mem opened.
Memory mapped at address 0xb6fde000.
Value at address 0xF0000004 (0xb6fde004): 0x12341234
debian@arm:~$ sudo ./devmem2 0xf0000008
/dev/mem opened.
Memory mapped at address 0xb6fbe000.
Value at address 0xF0000008 (0xb6fbe008): 0x12341234
3.Can anyine tell me what are the working timing parameters to be configured on imx side for cy6215 sram chip.
4.How to change the EIM frequency
Show LessPlease help to check the chip, may i know the whether the chip construction is correct
CY62157EV30LL-45ZSXIT DC 2237 Lot# 612226025 COO: Philippines
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Part Number:CY62187EV30LL-55BAXI
Date Code::2243; 2231、2225
Problem description:The part number is CY62187EV30LL-55BAXI. Part Dies with date codes 2231 and 2225 are shown in pictures 1, 2 and 3. The part die with date code 2243 is shown in pictures 4, 5 and 6.
Are both kinds of die applicable to this part?
1
2
3
4
5
6
Hi
We are using the CY7C4122KV13/CY7C4142KV13 SRAM in our design, with the address parity logic enabled. For the same:
1) We need the switching characteristics and Switching Waveforms for Address Parity and Parity Error operations as they were not available in the product datasheet.
2) Also, I have a two part query I'll illustrated with an example. Suppose we initiated a transaction T0 and within the RL cycles of T0, we initiate two more transactions T1 and T2. After RL cycles, we receive a Parity Error for T0. Then:
a) if the parity error counter indicates there was only 1 error and after clearing the parity error, should all the transactions. i.e. T0, T1 and T2 need to be repeated or only the first transaction (T0).
b) related to this, if the parity error counter indicates there were 2 errors, does this imply that the first 2 consecutive transactions (T0 and T1) failed or can it be T0 and T2?
It would be ideal if a dedicated documentation for the address parity implementation is available.
Regards
Aman
Hello all,
I tried downloading the BSDL file for the following component part number: cy7c1512kv18-250bzi. I was inspecting the BSDL file (please see attached) and saw that there were two instructions with the same bit. Would it be okay to combine the two instructions into one? Is there an updated BSDL for this component? Any information would be helpful. Thank you.
part number CY7C4285V-15ASI, the pin 55 for this part is GND part, but it is open, it is not connect with the wafer. would this be an problem to use the part ? will this cause the reliability problem?
Show LessWorking on a retro style CPU using mostly HC logic chips for fun.
I wanted to try something different with the register file.
I could build it too with 8 bit wide logic chips but thought I'd try using a small ram as the register file.
The cpu in question will work as follows.
On the low level of the clock the control lines will be setup
- a "read" address on the register file whose value will be fed into the ALU and also
- a "write" address on the register file where the ALU result will be written
On the rising edge of the clock the result of the ALU is latched into the slot identified by the write address.
The write address might be the same as the read address or a different location.
So in a single cycle data is fetched from the register file and looped back into the register file.
The general idea is as shown below. Though actually there are two "Read" addresses and one "write" address.
The thing below is build at the moment using a bunch of +ve edge triggered latches and a demultiplexer to select the "In" and "Out" instances.
To make the above work in a single clock cycle I need only the "In" data to be latched.
The Write/Read Addr and the "Out" are async (combinatorial) values.
I had considered putting a dual port SRAM in there instead of my edge triggered latches.
In this setup one of the ports would be always for "write" and the other port always for "read" (just like the sides of my existing 8 bit latches).
But a dual port async SRAM alone won't work as this potentially sets up a feedback loop from the "Out" back to the "In" via the ALU.
This feedback would happen whenever the WriteAddr and ReadAddr have the same value.
This feedback doesn't happen with my existing latches as the input to the latch only happens on the +ve edge.
Additionally there are these SRAM caveats in the docs about problems (busy and interrupts) when the Read and Write addresses are matching.
I noticed that dual port synchronous sram have this "flow through" feature and a latched input, which sounds promising.
However, these products also seem to have a latch on the output too.
And also latching on the addresses which will get in the way of the single cycle approach.
Does anyone have advice on these devices and concerns, and in particular whether this is even possible?
Thanks
Show LessFor Async SRAM, there are two timing parameters assosiated with read cycle, tDOE and tACE . tDOE is the maximum time from /OE Low to data valid and tACE is the maximum time from /CE Low to data valid on the bus during a read operation.
a) If you assert /CE at least (tACE - tDOE) time ahead of /OE , data will come at tDOE from the falling edge of /OE.
b) If you assert both /CE and /OE together, it will take tACE time from /CE or /OE falling edge for valid data to come on the bus.
Hope this clarifies the difference between the two parameters.
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For your ASYNC SRAM, the datasheet doesn't identify address bit numbers (all address pins are identified as just "A"). what is the address bit number to package pin number mapping?
Ans:
Since the ASYNC devices doesn't have an internal burst counter, the address numbering for Async SRAM's does not matter.
The pins can be connected in any way such that the routing is made simple.
The following link has the details-
http://www.cypress.com/?docID=44639