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Looking to design a low noise amplifier. Be it in sub GHz frequencies or higher frequencies up to 12 GHz. We have got you covered ! Infineon Technologies offers one of the widest portfolio of radio frequency transistors which offer exceptionally low NF, high gain, and high linearity at low power consumption levels. The transistors could be used in automotive applications (car antenna) , GNSS, Wireless infrastructure , mobile communication infrastructure , consumer appliances such as LCD TV, set-top boxes, industrial electronics such as automation, lighting , and the list goes on. Along with providing a wide portfolio, our products offer outstanding quality and reliability , assuring long term supply while still having an attractive price.
With the fast adoption of 5G technology, more antennas need to cover even more frequency bands within limited space. This can potentially affect antenna performance and result in higher design complexity. Antenna tuners help address these challenges to ensure fast and stable wireless connection everywhere. Infineon antenna tuners can be found in a variety of applications, such as smartphones, laptops, smartwatches, mobile routers, smart metering or asset tracking devices. In this forum, you can post your questions about Infineon antenna tuners and the coupler to find support from the community for your next project.
A low noise amplifier (LNA) amplifies a very low-power signal without significantly degrading its signal-to-noise ratio. When regular amplifiers amplify signals, additional noise is often introduced to the system. However, by using an electronic LNA, this noise can be significantly reduced. Infineon’s range of low noise amplifier ICs improve receiver sensitivity and thereby achieve the ultimate user experience. Our portfolio of MMIC RF LNAs is continuously updated to satisfy the ever-changing market requirements with custom made products for each application. Highly integrated in the smallest package, our LNA MMICs come with ESD protection and low power consumption, ideal for battery-operated mobile devices. What's more, our innovative SiGe technology delivers lower noise than silicon alternatives and performance comparable to more expensive GaAs counterparts.
These microelectronic components may be applied for antenna and frequency band selection to optimize an RF system in size, cost and performance. Infineon has a broad range of RF switch configurations and performance capabilities in terms of insertion loss, isolation, switching speed and power handling. Our CMOS RF switches are offered in very compact and robust packages ready to surface mount on PCBs.
I am trying to model BFP196WH6327XTSA1 in awr ,non linear model.But i am unsure how to add what files to awr ,tried using the spice files to model the noise figure but cant get it right so what i did was use gummel poon model in awr and manually added each value in awr as seen below but my gain value of my non linear is 5db higher than the s paramters model which seems wrong.
Help please ,i tried adding spice(lib files to awr but doesnt work) or what am i doing wrong .Using this to model the noise figure so cant use the s parameter.
"BGX50A E6327" will be adopted.
I would like to know the lower limit of the operating temperature.
What is the minimum operating temperature?
I would like to know if either of the RF Switches are closed when the device is powered down?
I've attached to my RF path RFC and have an inductor on RF1 and RF2, but I want to be able to switch off both by powering down the device, will this work?
If not please suggest your best part for the job. (up to 2.5Ghz)
I am looking for varactor diode that has wide tuning range. Ideally the tuning range should be from 0.1pF to 4pF. Frequency of operation around 3.5GHz. Package should be surface mount package.
I see you have BB837/BB857..but not recommended for new design?
Is it possible to use the BFP842ESD transistor for lower frequency low-noise amplifiers? I am trying to design a low noise amplifier for the 1-10 MHz range. In this frequency range, does Infineon have any information about what source impedance to use for minimizing the noise figure at these low frequencies (Figure 18 in datasheet)? The datasheet only seems to specify down to ~500 MHz.Show Less
I want to get LNA model for ADS simulating,I found 4 kinds of S parameter without noise data . How to find the spice model of BGB707L7ESD or S parametes with noise data? thanks.Show Less
I am reading the specification of BGS13SN8 .
I am not understand of the parameter of "Ctrl to RF Time " meaning ?
the comment show " 50% of ctrl signal to 90% of RF Signal " , does it mean when control signal input and raise to 50% AND 90% RF signal happen ?
I am currently developing the MIPI RFFE protocol to control the BGSX33MU16 switch. From its truth table, on REGISTER_0, we can maintain the switch by toggling its bits from D0 to D5. I could control bit D0, D1, D2, but could not do it on D3, D4, D5.
Is there anything that I missed? I think it's all on one register; the write procedure should be the same.