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Power MOSFETs have become an integral part of most of industrial and automotive applications, and Infineon offers leading-edge solutions to suit all needs. Infineon’s innovative OptiMOS™, CoolMOS™, and StrongIRFET™ low and medium voltage power MOSFETs consistently meet the highest quality and performance demands in key specifications for power system design, such as on-state resistance and figure of merit characteristics. Additionally, CoolMOS™ superjunction MOSFET offers a whole host of options for consumer, industrial, and automotive applications such as lighting, TV, audio, server/telecom, solar, EV charging, DC-DC converter, onboard chargers, and many more . In this forum, you can post your questions, comments, and feedback about Si/ SiC MOSFET of both industrial and automotive grades from Infineon.
Infineon’s IGBTs (Discretes and Modules) are available from 600 V to 6500 V with different current ratings and in different topologies targeting almost infinite number of applications. Find support from the community for your next project using products and evaluation boards offered by Infineon.
Infineon’s CoolGaN™ is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V. The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market. Switched-mode power circuits using CoolGaN™ can benefit from the improved energy efficiency and the improved power density, which is not possible with state-of-the-art silicon devices. In this forum, you can post your questions, comments, and feedback about CoolGaN™ devices and their applications.
Infineon being a market leader for power diodes and thyristors, offers core technology for wide range of application ranging from power level of 10kW to 10GW. We offer high efficient silicon or CoolSiC™ silicon carbide diodes in discrete housings as well as bare dies for the highest flexibility, with both industrial and automotive qualification. In this forum, you can post your questions, comments and feedback about any diode/ thyristor part from Infineon. You can even sign up for our free Newsletter to receive first-hand news and update.
The Smart Low-Side & High-Side Switches forum is designed for you to post your questions, comments and feedback about all our market’s most comprehensive portfolio of smart power switches like PROFET™, HITFET™, SPOC™, SPIDER and FLEX product families. Ask your technical questions or explore existing content!
Every switch needs a driver – the right driver makes a difference. Find your perfect driver with help from our community on our more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.
Infineon provides innovative, high-performance LED Driver ICs solutions that incorporate best-in-class technologies and can be used in a wide range of LED lighting applications including Automotive and Industrial Lighting. In this forum, you can post your questions, comments, and feedback about the LED driver products and evaluation boards offered by Infineon. You can even sign up for our free Newsletter to receive first-hand news and update.
Post your questions about Infineon Intelligent Power Modules (IPMs). Depending on the level of integration and power required there are different options of semiconductors and drivers in numerous packages for various voltage and current classes. CIPOS™ IPMs are families of highly integrated, compact power modules designed to drive motors in applications ranging from home appliances to fans, pumps, and general-purpose drives
In this forum you can post your questions, comments and feedback about the Infineon Merus range of mid power and high power Class D Amplifiers that range from 10Watts to 5kW! Infineon’s Merus Audio amplifiers range from Analog Input Discrete Class D amplifiers for Home, Professional and Aftermarket Automotive amplifiers through to highly integrated digital I2S input Class D amplifiers for portable and home active speakers. Post your questions below to get feedback from our team of audio experts. For the quickest response please share parts of your schematic, layout and configuration data. Below you’ll also find links to the latest board pages, GitHub, documents and FAQs.
This forum discusses topics on Motor Control ICs - iMOTION™, MOTIX™, MADK etc.
Discussion forum related to Power Management topics covering the following product groups: <br><br> <li>OPTIREG™ PMIC</li> <li>OPTIREG™ SBCs</li> <li>OPTIREG™ Linear</li> <li>OPTIREG™ Switcher</li> <li>DC-DC Converters</li> <li>AC-DC Power Conversion</li> <li>Automotive Conventional Powertrain ICs</li> <li>Wireless Charging ICs</li> <li>Isolated Industrial Interface</li> <li>Contactless power and sensing ICs</li> <li>Solid State Relay</li> <br> Ask your technical questions or explore existing content!
Welcome to the NFC Tag Side Controller NAC1080 and NGC1081 Forum! Explore and discuss the capabilities of these microcontrollers, including energy harvesting, NFC communication, and motor control. Connect with developers, share experiences, and learn about integrating these controllers into projects like IoT, smart devices, and industrial automation. Join now to unlock (pun intended) new possibilities!
I am currently working on PLECS Simulink platform about an inverter model using your SiC IGBT with parallel diode PLECS model (IKZA75N120CH7), I am confused about the thermal chain setting in the thermal model.
When I simulink my PLECS model, it is weird that the circuit seems to need infinite time until it can reach the stable state, I searched a lot and found out the problem is due to too high thermal capacity (C) in your thermal model. As you can see from following pictures, the original thermal chain is Foster type, I changed it into Cauer type according to the advice from PLECS Userform, it can't influence the results of simulation. However from that Cauer type we can clearly see that the last 2 thermal capacity (C) is too high to cause thermal time constant of circuit too long though the thermal resistance is relatively low.
So I would like to ask, is there any reason behind setting the thermal capacity so low? Since so low thermal capacity means too high a thermal time constant, the circuit actually can't reach a stable state, so the simulation results are also not so accurate, right? Because of corresponding thermal resistance of last 2 columns is very small, so I guess it won't influence the finally junction temperature a lot. Can I just delete the too high thermal capacity columns , then the thermal time constant is suitable and the circuit can reach a stable state easily.
Thanks a lot for your answer and help.
Hello! I have 2 questions related to REF-DAB11KIZSICSYS (11 kW SiC bi-directional DC/DC converter board for EV Charging and ESS applications):
- Is the CAN communication protocol available for this evaluation board? I would like to be able to configure it without using the GUI application. Instead, I would like to be able to configure it from a board with a Raspberry Pi running my own software. Can you please the CAN messages?
- From the Infineon demo video, it looks like we might have to stop the converter first, then change the output voltage/direction, then restart the converter again. Is that true? Is there anyway we can update the converter (e.g. change output voltage, change direction from charging an EV to discharging an EV) without having to stop the converter first and restart?
currently I am taking TLD7002-16ES # TLD7002-16ES driver in operation. The driver is mounted on our own PCB. NeitherOTP programmer board or the OTP wizard is used. The driver always returns 0x01 as output status ("internal fault" always on) and the driver stays in init mode (regarding ACK byte). The same effect comes while operating with Arduino.
Some relevant infomation read from register:
OST Status: 0x00 for all channel
OTP Status: 0x00
Otp register value read, starting from 0x83:
Hello IFX partner,
For TLE7259-3GE, "Suitable for 12 V and 24 V board net"
It is currently used in 24V systems, the maximum supply voltage will up to 48V, and after a while everything is normal for communication test. But the Max value is 40V in data sheet, Is it risky to use it this way?
If yes, Could you give us the suggestions for improvement? thanks a lot!Show Less
I am working on a project that enhances the fast transient response of an LDO using Reinforcement Learning (code written in Python). My problem is that I cant find any software to do the simulation to train the RL model and to see the result. I tried using Simulink but it cant be done since I need the circuit to be in SPICE and I also tried using subcircuit2ssc to convert the circuit from ltspice to simulink but multiple errors occurred, I also tried working with LabVIEW and multisim but it can not be done. Any suggestions for a suitable softwareShow Less
we are using this Infineon (IPC50N04S5L-5R5 PG-TDSON-8-33) MOSFET in synchronous buck converter application.
Why this 100K Resistor Used between Gate and Source of the MOSFET? (Refer the screenshot here)
Why 100K? Any tolerance recommended for this Resistor?
What happens if I change the value of the resistor?Show Less
Is the IRLML2803 OK to use with a 3.3V logic gate to source drive signal?
It is specified for 4.5V VGS.
Thee gate charge curve would seem to show that a 3.3V VGS signal would be iffy but the ID vs VGS curve shows low current operation at VGS = 3V.
I there a RDS(on) vs VGS curve for the IRLML2803?Show Less
I have a general question about the SOA curve provided in the datasheet of MOSFETs.
I have several 48V consumers (DC-Fan, DCDC-Converters) which I would like to switch by MOSFETs instead of relais, as it is now in our application The Vds will be between 42-58V usually. If I look at the SOA of e.g. the IAUA250N08S5N018
am I only allowed to drive around 2A @50Vds? DS also says 35A continuous which confuses me.
My worst case values are 16A @56V, can IAUA250N08S5N018 handle this?