Hello @chandraprakash ,
Thank you for contributing to the Infineon Community.
Junction temperature on POL devices can be calculated by using the below formula:
Tj is the junction temperature
Ta is the ambient temperature
Rth(j - a) is the thermal resistance from junction to ambient
Thermal resistance from junction to ambient is constant. ( For example, IR38060 has a thermal resistance of 30W/C from junction to ambient)
For a particular ambient temperature, the junction temperature is directly proportional to the power dissipation and in turn current.
For a constant current, the junction temperature increases as there is an increase in ambient temperature with time.
Hence, the junction temperature is influenced by both Ambient temperature and power dissipation.
Junction temperature can also be measured by using a thermal camera or thermocouple.
Regards,
Nishanth
Hello @chandraprakash ,
Thank you for contributing to the Infineon Community.
Junction temperature on POL devices can be calculated by using the below formula:
Tj is the junction temperature
Ta is the ambient temperature
Rth(j - a) is the thermal resistance from junction to ambient
Thermal resistance from junction to ambient is constant. ( For example, IR38060 has a thermal resistance of 30W/C from junction to ambient)
For a particular ambient temperature, the junction temperature is directly proportional to the power dissipation and in turn current.
For a constant current, the junction temperature increases as there is an increase in ambient temperature with time.
Hence, the junction temperature is influenced by both Ambient temperature and power dissipation.
Junction temperature can also be measured by using a thermal camera or thermocouple.
Regards,
Nishanth
