Greg,
I'm not an Infineon employee. They would be the better authority for your questions.
Before they weigh in I have some general observations from my experience.
As internal temperatures increase, silicon tends to get a little faster (frequency bandwidth). However silicon traces and silicon switches also acquire more resistance.
This means for digital circuitry that the rise and/or fall times get longer which can nullify the frequency gains.
For analog circuits temperature will adversely affect the switch routing switches. Besides the added temperature will contribute more thermal noise which will be more seen in highly sensitive circuits (especially at higher gains). ADCs at higher resolutions are going to see more lsb dithering that should be averaged out.
SRAM memory should be generally retained.
One more general temperature statement: All internal temperatures should be kept to 150C or below. Most silicon junction doping formulations start to 'melt' (diffuse) above 150C. Once the junction diffuses, it loses some of its semiconductor properties. It becomes more like a conductor. If the temperature is high enough, junctions will become non-functional.
FLASH memory could start losing some of its non-volatility.
A IC with an operational ambient upper limit of Ta = 85C allows for a +65C internal change so that the junction temp Tj doesn't exceed 150C.
How high do you anticipate the ambient temperature to get?
Len
"Engineering is an Art. The Art of Compromise."
