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PSoC™ 4

HaYa_4104701
New Contributor

PSOC4 EEPROM 写操作需要多长时间,为了增加EEPROM擦写次数,写操作是在一开辟的空间内滚动操作吗,组件需要如何配置

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RyanZhao
Moderator
Moderator

Hi Halden,

一个ROW(128字节)的写是最大20ms。

写操作是在一开辟的空间内滚动操作,参考函数:cy_en_em_eeprom_status_t Cy_Em_EEPROM_Write(uint32 addr,void * eepromData,uint32 size,cy_stc_eeprom_context_t * context)

组件配置可以参考每个参数右侧的描述以及PSoC Creator中的例程。

Thanks,

Ryan

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RyanZhao
Moderator
Moderator

Hi Halden,

一个ROW(128字节)的写是最大20ms。

写操作是在一开辟的空间内滚动操作,参考函数:cy_en_em_eeprom_status_t Cy_Em_EEPROM_Write(uint32 addr,void * eepromData,uint32 size,cy_stc_eeprom_context_t * context)

组件配置可以参考每个参数右侧的描述以及PSoC Creator中的例程。

Thanks,

Ryan

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HaYa_4104701
New Contributor

Dear Ryan:

擦除是不是还要20ms

发件人: RyanZ_36 <community-manager@cypress.com>

发送时间: 2019年4月23日 15:19

收件人: Halden Yang <Halden.Yang@arrow.com>

主题: Re: - PSOC4 EEPROM 写操作需要多长时间,为了增加EEPROM擦写次数,写操作是在一开辟的空间内滚动操作吗,组件需要如何配置

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PSOC4 EEPROM 写操作需要多长时间,为了增加EEPROM擦写次数,写操作是在一开辟的空间内滚动操作吗,组件需要如何配置

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RyanZhao
Moderator
Moderator

这里说的写操作包含了擦和写,一共20ms。参考datasheet中的SID174,175和176。

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