Nor Flash Forum Discussions

Hello,

I am unable to source the S25FL128SAGMFI011 flash memory device.  From the data sheet comparison I think I could use the  S25FL256LAGMFI003 as a drop in alternative.

If there is an obvious reason why that cannot work please do tell me, so far it looks viable to me.

Regards 

Rev E of the data sheet for S70GL02GT states in the General Description: “This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns.”

Under Performance Characteristics is stated for the 110ns part, a Page Access Time of 20 ns.

Reference data sheet S70GL02GT Rev E @ https://www.infineon.com/dgdl/Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7

Greg

What is the relevance of the Mirrorbit Flash process technology - is this simply indicating the manufacturing process of the chip or is there a correlation to performance, ect...

For example what advantages/disadvantages to the designer or end customer does a 110nm have compared to a 90nm or 65nm?

parts to use as reference
(110nm) S29GL064N90FFI010

(90nm) SS29GL128P11FFI010

(65nm) SS29GL064S70FHI010

In Table 11.9 ASO Entry Timing of the data sheet, there is the following note.

If this timing cannot be achieved, perform the following steps immediately after ASO Exit and before resuming normal processing: read one word from each of 64 unique 32 byte-aligned pages.

If you have a sample source for this procedure, would you please share it?

Thanks,
Tetsuo

Part S29GL064N90FFI010 has been listed as EOL, are there drop-in replacements available?

If so, please highlight any differences between the replacement parts.

Hi,

I have one issue when I try to read data from NOR memory S29GL512S11 with STM32H7A3. I have the initialization of interface correct, because I can read all parameters of device, like command set and the ID of device.  When the program try to read one address the value returned is 0xFFFF. I have this sample code to try.

  #define NOR_MEMORY_ADRESS1       0x60000000 //First address of 1 FMC bank
  #define NOR_CMD_DATA_READ_RESET  0x00F0
  
  uint16_t verify[3]={0};

  if(init_memorie(&nor1_interface)!=HAL_OK){
    Error_Handler();
  }
  NOR_WRITE(NOR_MEMORY_ADRESS1, NOR_CMD_DATA_READ_RESET);
  verify[0]=*(__IO uint16_t *)(NOR_MEMORY_ADRESS1);
  verify[1]=*(__IO uint16_t *)(NOR_MEMORY_ADRESS1+2);
  verify[2]=*(__IO uint16_t *)(NOR_MEMORY_ADRESS1+4);

I know that I have different data stored inside the chip, I have one external loader developed for that chip, running on STM32CubeProgrammer and I can erase, read and write the memory. The operation to read chip only work after the second try. How I can solve this problem?

Best regards,
Luis Cristovão

Hello,

Do you know where I can find the Tjc (thermal resistance junction to case) and max operating junction temperature for the S25FL128LAGNFB013?

The datasheet only states the Tja (thermal resistance junction to ambient) parameter and the ambient temperature.

Thanks,
Jason