Hi, 

I am working on S25Fl064L Flash Memory.

I Could read Device ID, Manufacture ID, Default Configuration Status Register values and it is matching according to data sheet values.

However, I could not write the data, and after debugging I came to know that WEL bit is not being set in Status Register 1 Volatile (SR1V).

Following thing I have done:

1) Read Status Register 1 Volatile (SR1V) value (using command 0x05), Output was 0x00 which was default value.

2) WREN command (0x06) is sent (Which is required to write the data to Nonvolatile memory)

3) Now again Read Status Register 1 value, Output was again 0x00, which should be 0x02. (WEL bit is still '0' only)

Please help, where I am wrong.

Best Regards, 

Ethan Hunt. 

I need to use the S25FL064L connect to STM32F446 microprocessor.

I'm starting to use for the first time thi smemory

This is my inizial example sequence:

------ ERASING -------

1) 0x06 WREN

2) 0x05 Check RDSR1

3) 0xD8 0x00 0x00 0x00 Block Erase

4) 0x05 Check RDSR1 waiting ready

------ WRITING -----

5) 0x06 WREN

6) 0x05 Check RDSR1

7) 0x32 Page Program  (I have doubt if it is correct)

😎 0x05 Check RDSR1(immediately free after precedente command)

---- READING -----

what commands should i use to activate the memory mapped system

I enclose an image of the writing commands ad address 00 value 2A .

There is a command example sequence for erase/write/read the memory ?

Thanks all

Hi,

we are using S25FL256L QSPI flash with intel Cyclone  V E fpga, we have written a script for FLash programming via JTAG mode from Quartus programmer. Our Read ID, auto detect as QSPI256mb flash , blank check process is successfully completing but failing in Program stage.

Programming fails at around 33% programming done, below is the error we get 

"Error (20064): Error status: Read status 2 register returned 0xFF is mismatch with the expected data (0x00) Error (19117): Programming failed on flash 1 at address 0x00BB0100 Error (209012): Operation failed"

when we read status 1 register(0x05) and status 2 register (0x07) we are getting value returned as 0XFF at address 0x00BB0100 . we are using 0x12 command for 4byte addressing mode page write. for address previous to 0x00BB0100 is ok we are not getting error ,as we added read status 1 register(0x05) and status 2 register (0x07) for it.

can you please suggest us , what can be probable reason for that error.

thanks,

Snehal B.

What is process to program S25FL256L QSPI flash for Intel Altera Cyclone V E FPGA?

We are NOT able to program S25FL256L using Intel’s Quartus Programmer.

The error is Silicon ID not detected for device 1.

This may be similar to a post that has NOT been resolved

• “Cypress Flash Programming using Nios II - Not working” @ https://community.infineon.com/t5/Nor-Flash/Cypress-Flash-Programming-using-Nios-II-Not-working/td-p/78031

There are two similar posts that have been solved, which aren’t the exact issue:

• S25FL128L Cyclone V Configuration @ https://community.infineon.com/t5/Nor-Flash/S25FL128L-Cyclone-V-Configuration/td-p/361155 <-- This discussion references Application Note AN200498, which I was NOT able to find.
• S25FL256S and Quartus @ https://community.infineon.com/t5/Nor-Flash/S25FL256S-and-Quartus/td-p/117569 <-- This is an older issue from 2018, likely using Quartus Prime 17.0 as it references AN98558. The specific solution here was “to write a wrapper around the QSYS module that forced the PLL reset to always be ‘0’.” If the current version of Quartus still needs a wrapper, is this something Infineon can provide? Or should I be asking Intel?

Greg

For Writing into the multiple memory locations in an loop 

iam giving commands

write enable 50---> write command 01 in which i'am writing into STR 1 ,cfgr1,2,3,4---->in for  loop{ write memory (02) followed by starting address and data }

Is this sequence correct?  i'am able to write only at one memory location after that if is not accepting when iam trying to read i got to Know it is not programmed , only starting memory location is programmed. 

what is the issue ? despite of giving enough latencies after each write still its not taking 

Hi,

                  Is it possible to do Progam Flash array using QPI DDR in S25HS01GT memory model?

Because im seeing in the S25HS01GT Data sheet  which does not mention any program command for program Flash array using write QPI DDR. Its mentioned command "ED "only for Read QPI DDR .

Kindly provide the information.

Thanks,

Suresh Muthuraj