S25FL164K: Do multiple program operation on the same page reduce data integrity?

frhic_3865271 · ‎Nov 16, 2018

Hi all

I'm currently using a S25FL164K SPI NOR flash in one of our designs. I'd like to program a few bytes on different offsets of a single page at different times. My question is if these multiple writes to the same page cause the flash to wear out. Or is it only the erase operation which causes wear out. The data sheet specifies only the erases per sector (which are at 100000) but not the writes per sectors.

Best regards

SudheeshK · ‎Nov 27, 2018

Hi,

The 100K endurance cycles specified in the datasheet is "per sector". You can change data in a sector by either a program or erase operation 100K times.

You can find more details about endurance and data retention specs of our flash memories in following application note, http://www.cypress.com/file/361971/download

Thanks and Regards,

Sudheesh

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S25FL164K: Do multiple program operation on the same page reduce data integrity?

S25FL164K: Do multiple program operation on the same page reduce data integrity?

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