Non Volatile RAM (F-RAM & NVSRAM) Forum Discussions
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Hello,
I'm trying to read the device ID in FM25V20A-PG by sending 1001 1111b using an Arduino nano.
The problem is that all I get back is 0xFF on the MISO line. Can some help me find a solution?
I have all my connections according to the datasheet. I have pin WP and DNU connected to VDD. I also tried changing the SPI frequency speed but nothing helped.
Settings in my code:
SPI_MODE0
MSBFIRST
Here is my Arduino code: (In the code I'm trying to see the first 3 bytes of the device's ID)
#include<SPI.h>
const int chipselect=10;
const byte RDID=0b10011111;
byte v=0x00;
void setup() {
// put your setup code here, to run once:
Serial.begin(9600);
pinMode(chipselect, OUTPUT);
digitalWrite(chipselect, HIGH);
Serial.print("Chip Select: "); Serial.println( digitalRead(chipselect), BIN); //To show Chip select pint status in the serial monitor
delay(20);
SPI.begin();
SPI.setBitOrder(MSBFIRST);
SPI.setDataMode(SPI_MODE0);
SPI.setClockDivider(SPI_CLOCK_DIV128);
digitalWrite(chipselect, LOW);
delay(1);
Serial.print("Chip Select: "); Serial.println( digitalRead(chipselect), BIN); //To show Chip select pint status in the serial monitor
v=SPI.transfer(RDID);
Serial.println(v, BIN);
v=SPI.transfer(0x00);
Serial.println(v, BIN);
v=SPI.transfer(0x00);
Serial.println(v, BIN);
v=SPI.transfer(0x00);
Serial.println(v, BIN);
digitalWrite(chipselect, HIGH);
Serial.print("Chip Select: "); Serial.println( digitalRead(chipselect), BIN); //To show Chip select pint status in the serial monitor
SPI.end();
}
void loop() {
// put your main code here, to run repeatedly:
}
Here is the output I get
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Hello community,
is there any Chance to replace a 5V SRAM 1to1 with the FM28V100 without the levelshifting things?
If i will reduce the circuit Voltage for the FRAM to 4V (ZDIODE ?) ?
In the Datasheets Maximum Ratings is stated as follows:
VDD relative toVSS -1V to 4.5V
and Input Voltage -1V to 4.5V and Vin<VDD+1V
Thank you in Advance for your answers.
Michael
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Hello,
What is the technology size for the FRAM CY15B102Q? Also, has this part (or similar FRAM parts) been tested for Single Event Upsets and Single Event Latchup? If so, what would be the associated SER?
Show LessHi,
We are currently experiencing high rates of data corruption in a CY15B104Q-LHXI device on our design. We see corruption occur only when we write at a high temperature (up to +85C), power cycle and then read at low temperature (down to -40C).
Corruption appears to be at random locations in the device, and we see bits transition in both directions. The failure rate increases with the delta in temperature between write/read cycles.
We're currently investigating, and have started looking for potential reasons for the corruption. We have a come across a few questions, would it be possible for one of the Cypress folks to take a look?
1. We find that if we replace the part with CY15Q102Q-S, OR FM25V20A the corruption does not occur. Are there any significant architectural differences between the 4Mb part and these 2Mb parts which may be causing the effect?
2. We have connected the centre pad to 0V on our design, although I noticed a note in the datasheet instructing it to be left floating. What are the implications of connecting this pad to ground? Is this is possible reason for the corruption?
3. I have been looking at App notes AN304 and AN302, which give recommendations about holding chip select inactive during power transitions, and we are currently investigating this. However, I noticed that AN302 is marked as obsolete. What is the reason for that? Is there any information in the note which is incorrect?
I'd be very interested to hear your thoughts, and know if you can suggest any reasons for the corruption.
Many thanks,
Bryan.
Show LessI am using a CY14B101PA, NvRAM/RTC device.
I remove the RTC backup battery. After powerup, I see the OSCF and BPF asserted. I clear them and wait 10 msec. I see the OSCF remain at 0, which makes sense. However, the BPF flag remains 0 even though there is no RTC battery.
Is this expected behavior?
Thank you for any input.
Show LessDear Cypress team,
I am looking for linux driver for this device. Is there any driver compatible for this?
I have kernel 4.9.140 and ARM platform.
Thanks.
Walter
Show LessGreen CLK 5MHz, SPI mode 0, Delay from CS Low to first hi-CLK edge is 26ns, ad the last clk edge from CS High 13ns.
Purple CS signal
Orange SOMI, the response from FRAM
An other acquisition for view MOSI output:
Green clk, orange SOMI, purple MOSI.
The micro to speak with F-RAM is TMS570LS3137.
The circuit to connect FRAM to TMS is very simple
3
I verify FRAM VDD is 3.293V.
Please can you help me?
Show LessHi CYPRESS memory support team
Thank you for your support always.I am Junya.
I have a question about Inrush Current Control.
Excelon LP 4-Mbit (512K x 😎 Serial (SPI) F-RAM.
CY15B104QN-50LPXI
https://www.cypress.com/file/444216/download
CY15B104QI-20LPXI
https://www.cypress.com/file/444171/download
I checked the data sheet and found the following differences.
・ Inrush Current Control,
・ Power Cycle Timing,
・ (Frequency, Package Typ ..)
So I have the following questions:
Question
1. Is there any device difference other than the following?
Inrush Current Control, Power Cycle Timing, (Frequency Package Type)
2. Control method of rush current control of CY15B104QI-20LPXI.
3. Inrush current (I PEAK etc.) value of CY15B104QN-50LPXI.
4, the trend of inrush current control. Will CYPRESS use products with inrush current control in the future?
Thank you.
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