Non Volatile RAM (F-RAM & NVSRAM) Forum Discussions

Hi,

I am using CY14E116N product. I want to use CY14E116N as the EMIF of DSP283xx. Any sample examples or code?

你好，我们需要4Mbit的FRAM做应用，我们的需求是3V,1.8V都可，SOP8，150Mils的封装，但从官网选型来看4Mbit的FRAM都是208Mils的，

请问下有没有150Mils, SOP8的4Mbit的FRAM?

您好！

我的机器人板卡上使用了一颗FM22LD16,  板卡上方有一个电机，在此应用场景下，铁电容易读写错误，拿到实验室下，读写错误现象消失，请问是否存在电机对铁电的影响？谢谢

Hi Sir，

An FM22LD16 is used on the board card of my robot, and there is a motor on the top of the board card. In this application scenario, f-ram is easy to make reading and writing errors. When taken to the laboratory, the phenomenon of reading and writing errors disappears. Is there any influence of motor to  F-ram?

thank you

Hi all,

I'm looking for some information about the SEU/MBU rate of the NV RAM FM28V100-TG.

I found an application note, AN15979, describing that for NV RAM, MBU is "virtually impossible" due to the way the memory is architected.But this document is not referenced in the Application Note of the Memory (cf. page https://www.cypress.com/part/fm28v100-tg ) so I would like to be sure that the Application note is applicable to this memory

Concerning SEU, I do not found information allowing me to calculate the rate. If there is somewhere some test results, or some data about the FM28V100-TG cross section, it would be extremely usefull !

In a general way, any information on the subject will be interesting

Thanks,

Romain

Hi,

Could you please provide the IBIS model for CY15B102N-ZS60XAT.

We planning replacing FM28V202A with CY15B102N-ZS60XAT in our design. Is the performance  characteristics of both the devices are same?

I got a question when I try to put a production test plan for FM25V20A FRAM. Our primary use for FRAM is to write in log files and pull to an external device. We are utilizing every cell in FRAM. If I want to test write and read to random memory address on each page of memory, the firmware implementation will be intensive. We have turn off the fire system (in other word, shut off the normal operating system) to do this. So I am seeking advice on how to test FRAM in production environment. Does it have a built-in error correction/check if something is wrong while writing to a memory address? Or, does it have certain failure mode that is necessary to check out before assembly?

As the datasheet "001-84499_FM25V10_1_Mbit_128K_X_8_Serial_SPI_F_RAM.pdf" describes :

The read access is as on the attached picture.

So Bit 23 (the 24th) is the last bit written, on the rising slope of SCK. The 1st read data bit D7 is available upon the falling slope of the same SCK pulse, which is somewhat unusual. Especially since the last bit read (D0) is available  on the falling 6th read-SCK. The 7th read-SCK is for nothing.

In my opinion, SO line should be shifted by one SCK to the right. Such that the bit D7 is available after the falling 0th read-SCK. And eventuall the last bit, D0, is available after the falling read-SCK7.

Please confirm and adjust the datasheet.

Dear Sirs,

  I have just started to use these FRAM memories. My test software for writing and reading is working 99% of the time.Occasionally I get a corrupted read immediately after power up. The memory contents is not corrupted as a further power cycle gives the correct results.

  I have noticed that the power up conditions are specified in the data sheet. There is no problem with tPU, as my first read is at least 100ms after Vdd is stable. However there may be a problem with tVR. I have measured the rise time from 0V to 2V as 95us/V.   My Vdd fall time is much slower than the spec, being 2.7ms/V.

Could you please explain the significance of these specifications. The memories are part of a complex design, and it would be difficult to change the Vdd rise and fall times without powering the memories from a special supply.

Is there a software solution to reset the memories after power up?

regards

Cosmo Little

Dear Cypress team,

I wonder if there is any compatible driver for this device at the space of U-Boot,

and U-Boot is release of 2016.07 on ARM platform.

Thanks.

Walter