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The NOR Flash Memory forum discusses critical safety features for automotive and industrial systems, and Semper NOR Flash Memory with ASIL-B compliant and ASIL-D-ready.
The HyperFlash NOR Flash memories Forum offers discussions on automotive advanced driver assistance systems (ADAS), automotive instrument cluster, automotive infotainment systems, and communication equipment.
HyperRAM™ memory Forum discusses self-refresh DRAM operating on the 12-pin HyperBus interface. With a read throughput up to 333 MB/s, the HyperRAM for SoCs with limited on-board RAM providing external scratch-pad memory for fast read and write operations.
Non-volatile RAM forum discusses Technology such as F-RAM and nvSRAM, which combine non-volatile data storage up to 16Mbit density with the high performance of RAM. These low-power memories offer high endurance, high data retention and instant non-volatility without external battery back-up, enabling system reliability and cost reduction.
Discussion forum for Specialty Memory topics.
Discussion forum for SRAM related topics.
The S29AL008J70BFI010 datasheet lists the sector trace time as "10s",
The S29AL008J70BFI010 datasheet lists a maximum sector trace time of 10s.
I understand from the above description that if it takes more than 10 seconds to execute a sector trace, it is considered to be abnormal, Is this correct?
I perchased the parts of CY15B108QN-40SXI, but the marking of them is “CY153D3”. We doubt that we received wrong parts.
Pls help to check that, thank you.Show Less
S29PL032J70BFI120 and S29PL032J70BFI070
What is the difference between these two products?
Are there any differences between them?
(5) production site (6) others
We use a S29GL01GT12DHVV10 for FPGA configuration memory. I am currently working on stress analysis and couldn't find any information in the datasheet for current of VIO pins. I believe all the max current consumption values on sheet 3 are for VCC. Looking for both a worst case/max and typical draw.
Please let me know processing across the boundary between Die1 and Die2 of S25HL02GT,
For example, when program 32 bytes from 07FFFFF0h, is one transaction acceptable?
Or do I have to split it into two transactions?
I am using S29GL064S uniform sector flash memory in word mode, where I have successfully read the CIF Query data, but want to understand, how the data should be considered (in Hex or Decimal) ?
Consider reading Chip erase timeout (address 0x22h) (As per datasheet --> Typical timeout for full chip erase 2^N ms)
Expected data = 0x10h (16 decimal)
So, which of the below timeout is correct?
1. Convert 10H to 16 decimal --> (1 << 16) = 65536 ms decimal
2. Consider 10 in decimal --> (1 << 10) = 1024 ms decimal
As per my understanding we will not have chip erase timeout of 65 sec.
I asked Maximum Junction Temperature to this community about S29AL008TFN010.
However I could not clear one thing, so hope someone answer to my question as folllowing.
In the datasheet, Section 13, Operating Ranges, it is listed as
Ambient Temperature : -40°C to 125°C,
I think the junction temperature of an IC operating in an ambient temperature of 125°C is higher than 125°C. Is the maximum junction temperature at which the IC can operate also 125°C?
Is the maximum junction temperature at which the IC can operate also 125°C?
I have S25FL128S software blocked second half of address memory.
Here is article describing this protection:
My question is how to unblock it back ?