Memories Forum Discussions

"Reference Schematic Design Recommendation for QDR-DDR II/II+/Xtreme SRAMs - KBA84386" www.cypress.com/ states that Vtt and Vref are both VDDQ/2, but that they have separate capacitor banks. Why the distinction?https://www.cypress.com/?id=4&rID=72249

Dear All,

My problem is that when I change year to even value my RTC(CY14C064I)

 update stops.

When I assign odd value of year the RTC(CY14C064I) update continues

I tried to solve this problem this whole day but still I am struct with the problem .

A quick question regarding the DOFF# pin for the QDR-II+ SRAM, part number CY7C25652KV18:

Does the DOFF# pin use HSTL logic levels, as given in the Vih and Vil of Table xx?

Or does DOFF# require other (CMOS?) logic levels as suggested by the wording in the description of  DOFF# in "Pin Definitions":

"Connecting this pin to ground turns off the PLL inside the device. The timings in the PLL turned off operation differs from those listed in this data sheet. For normal operation, this pin can be connected to a pull up through a 10 k or less pull up resistor."

Hi!

I'm having  trouble to find some pcb layout and guidelines for CY14B101P. As you guys know, it's packaged as SOIC16.

So, my doubt: Does anybody know where i can find the pcb guidelines for CY14B101P or for SOIC16???

Thx so much!

Fávero Santos

 Dear Sir,

I am presently using RTC/EEPROM CY14C064I of cypress with PSoc 5. I am sucessfully able to read RTC but I am having problem with writing on RTC . I have attached my code below. Please help me with the solution

Hi,

I am running the CY14B108N at 40Mhz (25ns), with VCC of 3.6V, and I am seeing ~95mA on power supply, during a read opeartion with outputs floating.  I was expecting less than 75mA! I have tried remvoing external pull ups, and VCAP. If I lower speed to 100kHz I see ~25mA which is about the amount that the Max condition appears to be over reading.  The ISB (Satndby current) reads ~2.5mA which is good and under the 10mA limit. Devices are functional.

Has anyone else ran into this before?

Thanks,

Rad

Hi,

I write a sequence as below, And I am using CY14B512Q2A IC with out auto store circuit.

step 1:  send 0X19 ,       //Disabling auto store

Step 2:  send 0X3C,      // store it in nonvolitile memory

Step3:  write "Ganesh" into address 00 to 05,     // writing some Data in IC using write command 

Step4: Swith OFF the module   //switch OFF power for the circuit.

Step5: Switch ON the module  //Switch ON Power supply.

Step6: Reading from the adress 00 to 05, and i get "Ganesh".

if you see the above steps what i did  is writing a data("Ganesh")in SRAM as per data sheet. but after disconnect the power this data should not be there in the particular adress.  but in my case the data is there. and i can read it every time. 

Please anybody tell me what is mistake in the Steps i follwed.