Memories Forum Discussions
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Nor Flash
The NOR Flash Memory forum discusses critical safety features for automotive and industrial systems, and Semper NOR Flash Memory with ASIL-B compliant and ASIL-D-ready.
Hyper Flash
The HyperFlash NOR Flash memories Forum offers discussions on automotive advanced driver assistance systems (ADAS), automotive instrument cluster, automotive infotainment systems, and communication equipment.
Hyper RAM
HyperRAM™ memory Forum discusses self-refresh DRAM operating on the 12-pin HyperBus interface. With a read throughput up to 333 MB/s, the HyperRAM for SoCs with limited on-board RAM providing external scratch-pad memory for fast read and write operations.
Non Volatile RAM (F-RAM & NVSRAM)
Non-volatile RAM forum discusses Technology such as F-RAM and nvSRAM, which combine non-volatile data storage up to 16Mbit density with the high performance of RAM. These low-power memories offer high endurance, high data retention and instant non-volatility without external battery back-up, enabling system reliability and cost reduction.
Featured Discussions
The absolute maximum junction temperatue of Sync SRAM is 125 deg C and the junction temperature can be calculated from the following link: http://www.cypress.com/?docID=23984 .The calculated junction temperature should be less than 125 deg C.
We can also calculate the worst case junction temperature which can be calculated using the same tool under the worst case conditions. For example, consider the Sync SRAM CY7C2665KV18-550BZXC. The worst case Tj can be calculated by substituting the following values in the tool:
Vdd=1.9 (max), Idd =1520 mA (X36, Idd at max frequency), α=1, f=550 MHz, CL = 5pf (Tested load), Number of Switching IOs=36, Vddq=1.9(max), No of ODT inputs=42, R=50 Ohm, Ta=70 deg C, Theta Ja= 12.55 . This would give the value of Tj as 122.6 deg C. This can be considered as the worst case Tj and the recommended maximum value of Tj.
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Hello,
I'm currently looking for a SRAM for my FPGA based design. The CY7C1462AV33 is a NoBL, pipelined 18x SRAM that supports up to 250MHz (i would like to use 200MHz). I have a few questions regarding that SRAM.
According to: http://www.cypress.com/?id=4&rID=30080 a single write cycle would take 2 clock cycle. Would a linear 4x writeburst take 5 clock cycle or also 2 cycle for every single write?
Since I'm using a FPGA to interface the SRAM, i want to spare as many I/O pins as possible. Is it possible to connect /CE1 and /CE3 to ground and just use CE2 as HIGH active CE?
Show LessHi everyone,
I'm a last year student with a question about an issue with CY62148EV30LL-55SXI. On my test card, I can write without problem, but the read operation induces much noise in the circuit.
First I thought it was a problem with the circuit, so I checked without the memory and circuit works fine, no shorts or wire issues. I'm also following official Cypress guidelines on bypass capacitors.
Since I'm working on stripboard with adapters, I thought it would be a track length/impedence issue, but since the write and read operation works similarly, I don't really know what's going on.
My only guess left is that the memory has trouble driving the data line for reading operation (?), whereas the microcontroller has no trouble driving the data line for writing operation.
What surprises me is that I don't really write/read fast (Instruction clock is at 4MHz => Write at 3,33 kHz, that would be rather slow), the noise induces some errors but with a software verification system, I managed to eliminate most of them. I eliminated all (I need to see with extended test to be sure) errors with lowering alimentation from 3.3V to 3V.
Speed is not my objective, but this issue (even if I found almost-shamanic workarounds) is still puzzling me and I would like, if possible, advice from a much more experienced person, that would be very nice.
Another question that may be dumb, but I want to be sure: If I want to use several memories sharing data line and address line, can I keep the others memories in Chip Select enabled, Output/Write disabled while the other one is operating? (I think that yes, but I want confirmation)
Sorry for the long post, I hope that it makes sense (since English is not my main language)
Thanks in advance
Axel
Show Lesshi i want to put CY62148EV30 in power down when i am on battery i have drawn schematic please check this and let me know where i am wrong .
thanks for your help
Regards,
Show LessIs there any recommendation or example for decoupling capacitor on CYF0018V of
Vcc1, Vcc2 and Vccio?
I will apply 25MHz clock into WCLK and RCLK.
Regards,
Koike
Show LessHello,
I will use a NoBL SRAM (CY7C1474BV33) in my PCB design with Virtex-5 FPGA. Is there any reference schematic design recommendation document for NoBL SRAMs?
Best,
Show LessHello,
I appear to have several CY14B108N that are repeatedly performing partial autostores to the lower addresses during powerdown even though the autostore has been software disabled. I have others that repeatedly work properly so I am confident that I am disabling correctly. I am also fairly confident that I am not accidentally triggereing the HSB pin to perform a hardware store. What else is there to check? My thought is that these devices have something wrong with their disable autostore circuitry, but how likely is this? Is this feature electrically tested before delivery? What else should I check that could interfere with the disable autostore and allow a partial autostore to the lower addresses to take place during powerdown? Also, since my lower addresses appear to be affected, how does the store occur across the addresses? Is the entire memory written at virtually the same time, or are the addresses sequenced starting at #0?
Thanks,
Rad
Show LessHi,
Do you have any test data available for radiation exposure and SEU/SEL on the FRAM parts? I'm specifically looking at FM22LD16 parts, but anything would be good. Looking to get confidence in these parts for a radiation harsh environment.
cheers
Mat
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