Memories Forum Discussions
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Nor Flash
The NOR Flash Memory forum discusses critical safety features for automotive and industrial systems, and Semper NOR Flash Memory with ASIL-B compliant and ASIL-D-ready.
Hyper Flash
The HyperFlash NOR Flash memories Forum offers discussions on automotive advanced driver assistance systems (ADAS), automotive instrument cluster, automotive infotainment systems, and communication equipment.
Hyper RAM
HyperRAM™ memory Forum discusses self-refresh DRAM operating on the 12-pin HyperBus interface. With a read throughput up to 333 MB/s, the HyperRAM for SoCs with limited on-board RAM providing external scratch-pad memory for fast read and write operations.
Non Volatile RAM (F-RAM & NVSRAM)
Non-volatile RAM forum discusses Technology such as F-RAM and nvSRAM, which combine non-volatile data storage up to 16Mbit density with the high performance of RAM. These low-power memories offer high endurance, high data retention and instant non-volatility without external battery back-up, enabling system reliability and cost reduction.
Featured Discussions
Hi
I try to erase quickly a memory NOR FLASH
for example a S25FL127S : 128Mbit = 32 seconds to clear all (with 50mA erase current !)
is it possible to start several block erase simultaneously ?
Are there faster memories in erase ?
thank you in advance
Show LessHi,
I was successfully executing the device-id command(0x9F) but after executing the WRAR command on some registers, I am not able to read even basic device-id command. In this case Executing the device-id command is returning 0xFFFFFFFF.
Reading the SR1 and CR1 registers before executing the device-id command is giving 0x0 and after the device-id command both the registers are giving 0xFF.
My command sequence are-
device-id read = 0x1C04049F and then STOP command
WRAR command is = 0x08180471
- 0x00002001.
Kindly help me out, device-id was working initially but not working now.
Thank You,
Om
Show LessI am trying to communicate with a FM25L04B F-RAM on a custom board, based on Texas Instruments TMS320F28335. I am using Simulink to program the controller and exploring the various peripherals. The datasheet of FM25L04B says that the CS pin has to be lowered for each instruction. I noticed that the WREN opcode is a single byte instruction, whereas a WRITE opcode, followed by the address and data byte makes a 3 byte instruction. I am wondering is I can instead use a fixed instruction length of 3 bytes and send 2 bytes dummy data after the WREN opcode to make it a 3 byte instruction as well. Will this method work?
Show LessHello, I am new to NOR Flash technology. I am planning to use S25FS256S for my application for data storage. I would appriciate if someone would clarify some basic doubts about flash write and erase. 1.Can I overwrite a page (256 byte) of data instead of going for erase of entire 4kB sector followed by write? 2.Can you refer me some material that will make it simpler to understand Flash read/write/erase process,especially the ones provided by Cypress? Thank You in advance for attending my query. -- Regards, Sonam
Show LessHi
I am looking for a good method to determine my calibration settings for the CY14B064 using an existing micro processor
I have the INT/SQW pin connected to an interrupt pin of the processor and I can measure the 512 calibration square wave but i battle to tell the difference between the correct 512hz and the actual frequencey of the square wave as the micro controller has a 80nS time per instruction and if i am correct i need to be able to detect 1.953nS per PPM drift.
Is there a way to do this cleverly? I thought of counting 100 cycles of the 512hz signals and then dividing that by 100 to get the average?
Ideally i would to have the micro do this for me to avoid having each board checked with a frequency counter and then manually "calibrated"
Can i use the 1hz signal to try and measure the error of the clock?
RGDS
Richard
Show LessHi,
i'm after some advice on the best way to change data on the flash device.
I've typically used eeprom in the past and modifying individual bytes has never been an issue.
I see with the S25FL116k device, to write even 1 byte, that location must first be erased (0xFF).
The smallest amount of data that can be erased is a sector (4kB).
Does this mean that i must copy 4kB of data, erase the sector and then re-write with data along with my new data?
It seems like i'm missing something.
How do other people approach this.
Kind regards,
Damian
Show LessDoes "\T" in the part number AM29F040B-90JF\T means Tape and reel?
How many are in a reel for this obsoleted part AM29F040B-90JF\T , anyone knows? Thank you!
Show LessHi,
I have implemented my design on an FPGA. I am trying to erase,write and read the SPI flash in the same order. I am able to erase and write properly but when i try to read soon after the write operation, it is showing all 1's. But if i give a power on reset to the flash and then read, it is showing the correct value which i wrote before. Please give some suggestions regarding this issue.
Show LessHello
From many time we are using the 16Mbit SRAM CY7C1061DV33-10BVXI. Now we move the application due to chenge form Cypress to the CY7C1061GN30-10BVXI without success.
If you see the datasheet there are not relevant change but the new part doesn't works.
There is anyone with the some issue?
Are there known problem with this Sram?
Could anyone that has something to suggest?
Show Less