Memories Forum Discussions

Hi

Hi

We received a delivery of CY15B102QSN-108SXI expecting the top marking Line 1 : CY152B3

What we got is the marking CY151B3

Is this also a valid marking for above mentioned device? Are there more valid markings?

Thanks in advance

aro

I am using S25FS256SAGNFI000 (DFN package with E-pad) and have not been able to confirm how the E-pad should be connected (am using datasheet 002-00368 Rev. *N). My guess is that I should tie it to ground - please confirm.

Thanks  -Jason

Dear Infineon,

I read below info from HyperRAM datasheet:

Table 24 3.0 V capacitive characteristics[51-53]

Input capacitance (CK, CK#, CS#) CI 6 pF
Delta input capacitance (CK, CK#) CID 0.50 pF
Output capacitance (RWDS) CO 6 pF
IO capacitance (DQx) CIO  6 pF
IO capacitance delta (DQx) CIOD 0.5 pF

Does that mean the capacitive load drive capability of the HyperRAM DQx is 6 pF ? 

If not, how to use above info for my design ?  Thanks.

Regards,

Brian

Hello,. 

i am looking for possible alternatives for NOR Flash S29GL128P90FFIR20, preferably same Form fit function.

it should be a drop in replacement for existing solutions.

Regards,

Kavitha 

Hi,

We are planning to use 32KB NVRAM (with or without external battery) in our design. Pls suggest a part.

Regards,

Srikanth Kacchu

Regarding S25FL128SAGBHIA00,

If I/O voltage is 3.3V, which is good for VIO/RFU ?
1. "no connect".
2. connect to 3.3V.

Best Regards,

Hideki