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Nor Flash
The NOR Flash Memory forum discusses critical safety features for automotive and industrial systems, and Semper NOR Flash Memory with ASIL-B compliant and ASIL-D-ready.
Hyper Flash
The HyperFlash NOR Flash memories Forum offers discussions on automotive advanced driver assistance systems (ADAS), automotive instrument cluster, automotive infotainment systems, and communication equipment.
Hyper RAM
HyperRAM™ memory Forum discusses self-refresh DRAM operating on the 12-pin HyperBus interface. With a read throughput up to 333 MB/s, the HyperRAM for SoCs with limited on-board RAM providing external scratch-pad memory for fast read and write operations.
Non Volatile RAM (F-RAM & NVSRAM)
Non-volatile RAM forum discusses Technology such as F-RAM and nvSRAM, which combine non-volatile data storage up to 16Mbit density with the high performance of RAM. These low-power memories offer high endurance, high data retention and instant non-volatility without external battery back-up, enabling system reliability and cost reduction.
Recent discussions
Hi,
Now I use S25HS512T flash chip in our project, and need SDK for the chip of your product.
I have submitted download request, but that request has not been progressed. So I hope you can deal it early!
Thank you!
Show LessHello, I want to use the S29GL512T through SM32F7 and I can't program/erase. In prior’s designs, the board had the memory S29GL128N and now I want to use the new S29GL512T without change the board design.
Thus, the first question is, can I issue the S29GL512T as 128Mbits memory keeping the A23 and A24 pins to no connect? Or is there any other inconvenient?
Then if there is no problem to use S29GL512T, I’ve developing an external loader to program the memory and, as I said, the program/erase doesn't work. I'm not sure what happens, but I suspect the sequence isn't sent successfully because the RD/BY# pin never detects the falling edge. Can you help me and suggest things to check for the program/erase process works?
This is the code for MassErase
int MassErase(void) {
uint8_t mass_erase = 0;
unsigned long polling_counter = 0xFFFFFFFF;
volatile uint16_t status_reg;
NOR_WRITE(NOR_ADDR_SHIFT(BSP_NOR_BASE_ADDR, NOR_MEMORY_16B, 0x555), 0xAA);
NOR_WRITE(NOR_ADDR_SHIFT(BSP_NOR_BASE_ADDR, NOR_MEMORY_16B, 0x2AA), 0x55);
NOR_WRITE(NOR_ADDR_SHIFT(BSP_NOR_BASE_ADDR, NOR_MEMORY_16B, 0x555), 0x80);
NOR_WRITE(NOR_ADDR_SHIFT(BSP_NOR_BASE_ADDR, NOR_MEMORY_16B, 0x555), 0xAA);
NOR_WRITE(NOR_ADDR_SHIFT(BSP_NOR_BASE_ADDR, NOR_MEMORY_16B, 0x2AA), 0x55);
NOR_WRITE(NOR_ADDR_SHIFT(BSP_NOR_BASE_ADDR, NOR_MEMORY_16B, 0x555), 0x10);
do {
polling_counter--;
NOR_WRITE(NOR_ADDR_SHIFT(BSP_NOR_BASE_ADDR, NOR_MEMORY_16B, 0x555), 0x70);
status_reg = *(__IO uint32_t *)(uint32_t)BSP_NOR_BASE_ADDR;
if( (status_reg & 0x80) == 0x80 ) /* Are all devices done bit 7 is 1 */
break;
}while(polling_counter);
#if DEBUG
if ((status_reg & 0x20) == 0x20) {
PRINT_TEXT("Mass erase error");
mass_erase = 0;
} else {
PRINT_TEXT("Mass erase done!");
mass_erase = 1;
}
#endif
return mass_erase;
}
Show Less
We are planning to use Erase Suspend and Resume operations for S29GL032N NOR Flash in our product.
We want to know how much time Erase Suspend command execution will take (min and max values).
This time is not given in the datasheet.
Regards,
Anil Patil
Show Less
您好!
我想向您咨询一个问题:我在使用贵公司S25HS512T flash芯片时,使用candence的qspi控制器对flash芯片进行寄存器配置,可能是由于配置出错,现在本人已无法对贵司的flash芯片寄存器进行读写。
无论我如何配置,所有寄存器读回来的数值都是0xFF,导致存储数据也无法正常读写,目前只能正确读出flash的ID。
请问该问题如何解决,我现在想将flash恢复到出厂默认值,包括寄存器在内,请问该如何操作!
期待您能尽快回复!
谢谢!
Hello!
I would like to ask you a question: when I used your company's S25HS512T flash chip, I used Candence's QSPI controller to configure the register of the flash chip. It may be due to configuration error, now I can no longer read and write the register of your company's flash chip.
No matter how I configure the flash, the value read back from all registers is 0xFF, so the memory data cannot be read and written normally. At present, only the ID of Flash can be read correctly.
May I ask how to solve this problem? Now I want to restore Flash to the factory default value, including the register, may I ask how to operate!
Looking forward to your early reply!
Best Wishes!
Show LessHas the FM25V02A or similar FRAM device been tested for EMI environments like RS103 up to or beyond levels of 20,000 V/m?
We are experiencing issues where even though the system is configured to not write to the device, the first few addresses (0,1,2,3) are changing value when exposed to a radiated field at high levels.
Show LessWe are planning to use Erase Suspend and Resume operations during Sector Erase in S29GL032N NOR Flash.
We want to know if there is data available for how much one Erase Suspend and Resume operation will impact on the Sector Erase time (min and max).
Also want to know the device Reliability due to frequent Suspend/Resume operations during Sector Erase.
Regards,
Anil Patil
Show Lesswhere should i connect the exposed pad of WSON 5 x 6 mm package?
Please provide maximum junction temperature for IC S29GL01GT11DHB020.
We require this data on urgent basis.
Hi,
I patched the linux-5.4.40-cy-spimem.patch to TI provided SDK.
And I modified the device tree like below,
&main_spi0 {
pinctrl-names = "default";
pinctrl-0 = <&main_spi0_pins_default>;
ti,pindir-d0-out-d1-in = <1>;
nvram@0 {
compatible = "cy-spimem", "jedec,spi-nor";
reg = <0>;
spi-max-frequency = <40000000>;
#spi-cs-high;
#data-size = <16>;
};
};
But the spi speed is not 40Mhz as expected. Please help to point out how to set the spi speed in device tree for FRAM?
Best Regards
xixiguo
Show LessI have one doubt regarding S25FL256SAGMFI013 NOR Flash. I am interfacing this with Virtex 7 FPGA. Let me know the supply voltage of SCK pin if I am tie VIO pin to 1.8V?
Show Less