Level 2
When a half-bridge is configured as Active OFF (HBxMODE[1:0] = 11B while the charge pump is enabled), then the MOSFETs of HBx are indeed actively turned off by the current sinks of the floating gate drivers.
Title: Gate driver active discharge for one half-bridge
In normal mode, a half-bridge is in passive discharge if HBxMODE[1:0] = 00B.
The passive discharge consists of a pull-down resistor:
- Between GHx and GND to keep the high-side MOSFETs off
- Between GLx and GND to keep the low-side MOSFETs off
Title: Gate driver passive discharge for one half-bridge
The passive discharge is enabled for example:
- in Sleep Mode and in Stop Mode, in order to reduce the current consumption of the device
- in Normal Mode when the charge pump is on and HBxMODE[1:0]= 00B, in order to reduce the current consumption
- to ensure the termination of GHx and GLx when an active discharge is not possible (e.g. when the charge pump is deactivated or in case of charge pump undervoltage):
o Overtemperature event
o VS undervoltage / overvoltage event
o Charge pump undervoltage
o Fail safe mode
o CPEN bit = 0
Title: Gate driver active discharge for one half-bridge
In normal mode, a half-bridge is in passive discharge if HBxMODE[1:0] = 00B.
The passive discharge consists of a pull-down resistor:
- Between GHx and GND to keep the high-side MOSFETs off
- Between GLx and GND to keep the low-side MOSFETs off
Title: Gate driver passive discharge for one half-bridge
The passive discharge is enabled for example:
- in Sleep Mode and in Stop Mode, in order to reduce the current consumption of the device
- in Normal Mode when the charge pump is on and HBxMODE[1:0]= 00B, in order to reduce the current consumption
- to ensure the termination of GHx and GLx when an active discharge is not possible (e.g. when the charge pump is deactivated or in case of charge pump undervoltage):
o Overtemperature event
o VS undervoltage / overvoltage event
o Charge pump undervoltage
o Fail safe mode
o CPEN bit = 0
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