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1. Activate the charge pump: Set CPEN = 1 in register GENCTRL.
2. Configure the drain-source overvoltage filter time (recommendation: increase TFVDS to 1 µs: TFVDS[0:1] = 01b to filter eventual spikes).
3. Configure the drain-source overvoltage thresholds: Registers: LS_VDS, HS_VDS
The default value of 200 mV might be OK, it depends on the max. current and the max. Rdson of the external MOSFETs.
4. Configure the blank times and cross current protection times for active and freewheeling MOSFETs (CCP_BLK). This register (like all registers with BANK bits) must be addressed several times in order to configure the different outputs and the active / freewheeling MOSFETs.
5. Configure the static charge and discharge currents (Register ST_ICHG).
6. Activate the HSx or LSx (Register HBMODE).
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1. Activate the charge pump: Set CPEN = 1 in register GENCTRL.
2. Configure the drain-source overvoltage filter time (recommendation: increase TFVDS to 1 µs: TFVDS[0:1] = 01b to filter eventual spikes).
3. Configure the drain-source overvoltage thresholds: Registers: LS_VDS, HS_VDS
The default value of 200 mV might be OK, it depends on the max. current and the max. Rdson of the external MOSFETs.
4. Configure the blank times and cross current protection times for active and freewheeling MOSFETs (CCP_BLK). This register (like all registers with BANK bits) must be addressed several times in order to configure the different outputs and the active / freewheeling MOSFETs.
5. Configure the static charge and discharge currents (Register ST_ICHG).
6. Activate the HSx or LSx (Register HBMODE).