MOSFET (Si/SiC) Forum Discussions
Please suggest suitable parts similar to IRLL3303TRPBF part . We need exact replacement part number for this . Could you please suggest.
Thank you always.
Let me confirm one point regarding 1200V discrete SiC.
Is it possible to receive FBSOA for IMZA120R030M1H and IMZA120R040M1H?
Is it my understanding that the reason why it is not mentioned in the data sheet is because it is assumed that the application being considered will be used in a circuit that mainly performs switching?
There is a description of FBSOA in 650V withstand voltage discrete SiC, but if there is a reason why it is not written in 1200V withstand voltage, please let me know.
I have a general question about the SOA curve provided in the datasheet of MOSFETs.
I have several 48V consumers (DC-Fan, DCDC-Converters) which I would like to switch by MOSFETs instead of relais, as it is now in our application The Vds will be between 42-58V usually. If I look at the SOA of e.g. the IAUA250N08S5N018
am I only allowed to drive around 2A @50Vds? DS also says 35A continuous which confuses me.
My worst case values are 16A @56V, can IAUA250N08S5N018 handle this?
Is the IRLML2803 OK to use with a 3.3V logic gate to source drive signal?
It is specified for 4.5V VGS.
Thee gate charge curve would seem to show that a 3.3V VGS signal would be iffy but the ID vs VGS curve shows low current operation at VGS = 3V.
I there a RDS(on) vs VGS curve for the IRLML2803?Show Less
I am referring to the application note for designing the a Power Switch "Ensuring the Safe Operation of MOSFETs in Bidirectional Protection Power Switch (BDPS) Applications". The application of Power switch for what I am designing is for - where BMS , power switch and the battery are all in the same enclosure.
I have similar specs where max. ambient temperature inside the enclosure should be less than or equal to 50C, If it goes above (ex -60C, hard cutoff)that BMS enters protection mode turning Off the switch. My concern is if I follow the same procedure to calculate the max. allowed current for a selected MOSFET, and I have ambient temperature 50C (lets say during charging of the pack) and am operating the MOSFET at max. allowed current.
heat flow = (Tj - Ta)/Rthj-a, Rthj-a is constant
While transferring heat, the ambient temperature will raise , when it raises temperature difference reduces affecting the heat flow and the Tj increases.
In this case my design spec where Tj Ta selected both exceeds 90C and 50C.
How do I estimate how much will be the increase in ambient temperature inside the enclosure when heat is transferred from junction temperature ?
What should be my ambient temperature used for calculation where while I am operating MOSFET at max. allowed current , not affecting my ambient temperature not exceeding the BMS temperature threshold - temperature warning above 50C and temperature cutoff above 60C?
how can I design where Heat transfer doesnt change my ambient temperature ?
Thank you in advance,
I am using the IAUC45N04S6N070HATMA1 half-bridge in a design and am using the suggested footprint from the datasheet. The suggested footprint has keepout areas between what appears to be thermal pads and the associated pins on the part. I can see from the bottom image of the part that those "thermal pads" are actually connected to pins.
It would simplify the PCB routing significantly if I can route directly to the the "thermal pad" that is connected to pins 2 and 3 instead of routing directly to pins 2 and 3. Would this be a problem?
Do you have an example PCB layout from maybe one of your reference designs that uses a half-bridge in the PG-TDSON-8-57 package?
Thanks, DavidShow Less
Hello infineon team
I am currently designing a half-bridge llc converter that operates at 200kHz. The controller is using ICE2HS01G.
As a result of the simulation, the peak current on the primary side is 20A.
Please recommend an appropriate MOSFET (satisfying CFD7, HDSOP-10 package) for my system.
Also, is there a tool (e.g. EXCEL) to design LLC by applying ICE2HS01G ?
I have some troubles with IR2101 IC chip
Before I tested in pspice, it works well ( below 2 pictures )
BUT when I tested this circuit in breadboard, it doesn't work that I expected.
I can't solve this problem for 2 weeks.. please help me
I am currently working on PLECS Simulink platform about an inverter model using your SiC MOSFET PLECS model (IMZA120R020M1H), I am quite confused about the conduction loss in the thermal model, hense I have 2 questions about this thermal model.
1. Just as the following picture 1 shows that the Von of Forward MOSFET und Reverse MOSFET is same, considering the effects of bodydiode inside MOSFET it is usually that the Von of Forward MOSFET und Reverse MOSFET should be at least a little different, right? As far as I see, the Von of Reverse MOSFET should be a little lower than Foward MOSFET, since the Ron of Reverse channel is lower.
2. Since the PLECS thermal model type is "MOSFET with Diode", so the conduction loss should be a total conduction losses of MOSFET and bodydiode. And if there is not positive gate signal for MOSFET, the reverse conduction channel should only be bodydiode, right? However unfortually it seems that the thermal model has mixed the Reverse MOSFET channel and bodydiode channel. It is sad that I can't upload my plecs model in the attachment, so you can figure out my problem clearly. The problem is when there is no positive gate signal for S5/S6 MOSFET (shown in picture 2), it still works in the Reverse channel of MOSFET, due to no extra bodydiode channel for current to conduct. For this problem, can you give me a suggestion to fix it? Or do you maybe have the newest correct PLECS model that can help me solve this problem?
Thanks a lot for your answer and help!