Hi Team,

Please suggest suitable parts similar to IRLL3303TRPBF part . We need exact replacement part number for this . Could you please suggest.

Thanks,

Nagasuresh

Thank you always.
Let me confirm one point regarding 1200V discrete SiC.

【question】
Is it possible to receive FBSOA for IMZA120R030M1H and IMZA120R040M1H?
Is it my understanding that the reason why it is not mentioned in the data sheet is because it is assumed that the application being considered will be used in a circuit that mainly performs switching?
There is a description of FBSOA in 650V withstand voltage discrete SiC, but if there is a reason why it is not written in 1200V withstand voltage, please let me know.

Regards

Hi

I have a general question about the SOA curve provided in the datasheet of MOSFETs.

I have several 48V consumers (DC-Fan, DCDC-Converters) which I would like to switch by MOSFETs instead of relais, as it is now in our application The Vds will be between 42-58V usually. If I look at the SOA of e.g. the IAUA250N08S5N018 

am I only allowed to drive around 2A @50Vds? DS also says 35A continuous which confuses me. 

My worst case values are 16A @56V, can IAUA250N08S5N018  handle this?

Thank you.

Andy

Is the IRLML2803 OK to use with a 3.3V logic gate to source drive signal?

It is specified for 4.5V VGS.

Thee gate charge curve would seem to show that a 3.3V VGS signal would be iffy but the ID vs VGS curve shows low current operation at VGS = 3V.

I there a RDS(on) vs VGS curve for the IRLML2803?

I am referring to the application note for designing the  a Power Switch "Ensuring the Safe Operation of MOSFETs in Bidirectional Protection Power Switch (BDPS) Applications".  The application of Power switch for what I am designing is for -  where BMS , power switch and the battery are all in the same enclosure. 

I have similar specs where  max. ambient temperature  inside the  enclosure should be less than or equal to 50C, If it goes above (ex -60C, hard cutoff)that BMS enters protection mode turning Off the switch.  My concern is if I follow the same procedure to calculate the max. allowed current  for a selected MOSFET,  and I have  ambient temperature 50C (lets say during charging of the pack) and  am operating the MOSFET at max. allowed current.

heat flow =  (Tj - Ta)/Rthj-a, Rthj-a is constant

While transferring heat, the ambient  temperature will raise , when it raises temperature difference reduces affecting the heat flow and the  Tj increases. 

In this case my design spec where Tj Ta selected  both exceeds 90C and 50C. 

How do I estimate how much will be the increase in ambient temperature inside the enclosure when heat is transferred from junction temperature ?

What should be my ambient temperature used for calculation  where while I am operating MOSFET at max. allowed current , not affecting my  ambient temperature not exceeding the BMS temperature threshold - temperature warning above 50C and temperature cutoff above 60C?

how can I design where Heat transfer doesnt change my ambient temperature ?

Thank you in advance, 

Kiran