MOSFET (Si/SiC) Forum Discussions
I am referring to the application note for designing the a Power Switch "Ensuring the Safe Operation of MOSFETs in Bidirectional Protection Power Switch (BDPS) Applications". The application of Power switch for what I am designing is for - where BMS , power switch and the battery are all in the same enclosure.
I have similar specs where max. ambient temperature inside the enclosure should be less than or equal to 50C, If it goes above (ex -60C, hard cutoff)that BMS enters protection mode turning Off the switch. My concern is if I follow the same procedure to calculate the max. allowed current for a selected MOSFET, and I have ambient temperature 50C (lets say during charging of the pack) and am operating the MOSFET at max. allowed current.
heat flow = (Tj - Ta)/Rthj-a, Rthj-a is constant
While transferring heat, the ambient temperature will raise , when it raises temperature difference reduces affecting the heat flow and the Tj increases.
In this case my design spec where Tj Ta selected both exceeds 90C and 50C.
How do I estimate how much will be the increase in ambient temperature inside the enclosure when heat is transferred from junction temperature ?
What should be my ambient temperature used for calculation where while I am operating MOSFET at max. allowed current , not affecting my ambient temperature not exceeding the BMS temperature threshold - temperature warning above 50C and temperature cutoff above 60C?
how can I design where Heat transfer doesnt change my ambient temperature ?
Thank you in advance,
I am using the IAUC45N04S6N070HATMA1 half-bridge in a design and am using the suggested footprint from the datasheet. The suggested footprint has keepout areas between what appears to be thermal pads and the associated pins on the part. I can see from the bottom image of the part that those "thermal pads" are actually connected to pins.
It would simplify the PCB routing significantly if I can route directly to the the "thermal pad" that is connected to pins 2 and 3 instead of routing directly to pins 2 and 3. Would this be a problem?
Do you have an example PCB layout from maybe one of your reference designs that uses a half-bridge in the PG-TDSON-8-57 package?
Thanks, DavidShow Less
Hello infineon team
I am currently designing a half-bridge llc converter that operates at 200kHz. The controller is using ICE2HS01G.
As a result of the simulation, the peak current on the primary side is 20A.
Please recommend an appropriate MOSFET (satisfying CFD7, HDSOP-10 package) for my system.
Also, is there a tool (e.g. EXCEL) to design LLC by applying ICE2HS01G ?
I have some troubles with IR2101 IC chip
Before I tested in pspice, it works well ( below 2 pictures )
BUT when I tested this circuit in breadboard, it doesn't work that I expected.
I can't solve this problem for 2 weeks.. please help me
I am currently working on PLECS Simulink platform about an inverter model using your SiC MOSFET PLECS model (IMZA120R020M1H), I am quite confused about the conduction loss in the thermal model, hense I have 2 questions about this thermal model.
1. Just as the following picture 1 shows that the Von of Forward MOSFET und Reverse MOSFET is same, considering the effects of bodydiode inside MOSFET it is usually that the Von of Forward MOSFET und Reverse MOSFET should be at least a little different, right? As far as I see, the Von of Reverse MOSFET should be a little lower than Foward MOSFET, since the Ron of Reverse channel is lower.
2. Since the PLECS thermal model type is "MOSFET with Diode", so the conduction loss should be a total conduction losses of MOSFET and bodydiode. And if there is not positive gate signal for MOSFET, the reverse conduction channel should only be bodydiode, right? However unfortually it seems that the thermal model has mixed the Reverse MOSFET channel and bodydiode channel. It is sad that I can't upload my plecs model in the attachment, so you can figure out my problem clearly. The problem is when there is no positive gate signal for S5/S6 MOSFET (shown in picture 2), it still works in the Reverse channel of MOSFET, due to no extra bodydiode channel for current to conduct. For this problem, can you give me a suggestion to fix it? Or do you maybe have the newest correct PLECS model that can help me solve this problem?
Thanks a lot for your answer and help!
I would like to know the dimensions of the recommended footprint of the MOSFET "PT012N08NF2S"
It was not listed in the data sheet.
I'm sorry, but it would be helpful if you could tell me.
Thank you in advance.Show Less
Hi, can I read a shunt placed like this? I need to share this shunt with another IC and this location is mandatory.
Is the graph already adjusted for temperature? It appears RDS(on) in the left margin is the value for each temperature, correct?
Table is slightly different identifies the left margin as RDS(on) (normalized to 25C) and would require the respective value on the left of the graph to be multiplied by RDS(on), Max, to get the resulting RDS(on) at the respective temperature, correct?