Is the IRLML2803 OK to use with a 3.3V logic gate to source drive signal?

It is specified for 4.5V VGS.

Thee gate charge curve would seem to show that a 3.3V VGS signal would be iffy but the ID vs VGS curve shows low current operation at VGS = 3V.

I there a RDS(on) vs VGS curve for the IRLML2803?

I am referring to the application note for designing the  a Power Switch "Ensuring the Safe Operation of MOSFETs in Bidirectional Protection Power Switch (BDPS) Applications".  The application of Power switch for what I am designing is for -  where BMS , power switch and the battery are all in the same enclosure. 

I have similar specs where  max. ambient temperature  inside the  enclosure should be less than or equal to 50C, If it goes above (ex -60C, hard cutoff)that BMS enters protection mode turning Off the switch.  My concern is if I follow the same procedure to calculate the max. allowed current  for a selected MOSFET,  and I have  ambient temperature 50C (lets say during charging of the pack) and  am operating the MOSFET at max. allowed current.

heat flow =  (Tj - Ta)/Rthj-a, Rthj-a is constant

While transferring heat, the ambient  temperature will raise , when it raises temperature difference reduces affecting the heat flow and the  Tj increases. 

In this case my design spec where Tj Ta selected  both exceeds 90C and 50C. 

How do I estimate how much will be the increase in ambient temperature inside the enclosure when heat is transferred from junction temperature ?

What should be my ambient temperature used for calculation  where while I am operating MOSFET at max. allowed current , not affecting my  ambient temperature not exceeding the BMS temperature threshold - temperature warning above 50C and temperature cutoff above 60C?

how can I design where Heat transfer doesnt change my ambient temperature ?

Thank you in advance, 

Kiran

Hi

I have a general question about the SOA curve provided in the datasheet of MOSFETs.

I have several 48V consumers (DC-Fan, DCDC-Converters) which I would like to switch by MOSFETs instead of relais, as it is now in our application The Vds will be between 42-58V usually. If I look at the SOA of e.g. the IAUA250N08S5N018 

am I only allowed to drive around 2A @50Vds? DS also says 35A continuous which confuses me. 

My worst case values are 16A @56V, can IAUA250N08S5N018  handle this?

Thank you.

Andy

Hi,

I am currently working on PLECS Simulink platform about an inverter model using your SiC MOSFET PLECS model (IMZA120R020M1H), I am quite confused about the conduction loss in the thermal model, hense I have 2 questions about this thermal model.

1. Just as the following picture 1 shows that the Von of Forward MOSFET und Reverse MOSFET is same, considering the effects of bodydiode inside MOSFET it is usually that the Von of Forward MOSFET und Reverse MOSFET should be at least a little different, right? As far as I see, the Von of Reverse MOSFET should be a little lower than Foward MOSFET, since the Ron of Reverse channel is lower.

2. Since the PLECS thermal model type is "MOSFET with Diode", so the conduction loss should be a total conduction losses of MOSFET and bodydiode. And if there is not positive gate signal for MOSFET, the reverse conduction channel should only be bodydiode, right? However unfortually it seems that the thermal model has mixed the Reverse MOSFET channel and bodydiode channel. It is sad that I can't upload my plecs model in the attachment, so you can figure out my problem clearly. The problem is when there is no positive gate signal for S5/S6 MOSFET (shown in picture 2), it still works in the Reverse channel of MOSFET, due to no extra bodydiode channel for current to conduct. For this problem, can you give me a suggestion to fix it? Or do you maybe have the newest correct PLECS model that can help me solve this problem?

Thanks a lot for your answer and help!

Best regards

Joy

We've done X ray test on IRLR3110ZTRPBF, and found the structure is different, the date code is 2207 vs 2203, is there any documents indicated for the PCN?  the structure is related to the factory location?  One is Diffused in TAWAN, Assembled in CHINA, the other one is only Assembled in CHINA.

Hello,

I am trying to connect multiple si-carbide power Mosfet in parallel connection, Also I am using driver IC  (1ED3123MU12HXUMA1). I have a question that can I short IN+ pin of two driving IC with PWM signal?

Can anyone please suggest  solution. 

Thank you.

i am reading the datasheet of TLE9183.and there is some description about crc3 in page 22 :

The CRC generator polynomial is x^3+x^1+1.The seed value is '101',hence the start value results in '100'

I have some questions:

①Is my calculation of start value correct？101 adds three zeros in the tails,and that is 101000.101000 divided by 1011（polynomial）and the remainder is 100,as start value.

②since we get the start value.How to calculate the crc for the original data ,bit by bit.

I would be very grateful if I could receive detailed guidance.

I am working on a project that enhances the fast transient response of an LDO using Reinforcement Learning (code written in Python). My problem is that I cant find any software to do the simulation to train the RL model and to see the result. I tried using Simulink but it cant be done since I need the circuit to be in SPICE and I also tried using subcircuit2ssc to convert the circuit from ltspice to simulink but multiple errors occurred, I also tried working with LabVIEW and multisim but it can not be done. Any suggestions for a suitable software