MOSFET (Si/SiC) Forum Discussions

Good Afternoon,

I am Aravind, working as a Project Associate at IIT Madras. Currently, I am working on a 36kW (peak power) project with 92VDC and 700Arms. Please help me to select MOSFET and gate driver for this application.

Hello,

I was wondering if the Co(tr) is also available for other FETs/Transistors than GaN and SiC.

Additionally, I was wondering if Co(tr) can also be used for voltage levels, which are different to the voltage level used to determine Co(tr). For example, Co(tr) was determined by loading the output capacitance from 0 to 500V, but the voltage level used is only 300V.

This is my understanding of Co(tr):
The fixed capacitance Co(tr) is used to capture the relationship between charge and voltage of the discontinuous output capacitance. Here, the equivalent capacitance Co(tr) is determined by charging the output capacitance at a current i and a voltage V, and thus describes the time-related effective output capacitance. Thus, Co(tr) can be used to determine the charge/discharge time of the output capacitance Coss independent of the topology.

Best regards

いつもお世話になっております。

SOAの1msデータを開示して頂けませんでしょうか？

以上、よろしくお願いいたします。

AIMW120R035M1H

I am planning to use a 1200V SiC FET, "AIMW120R035M1H" to construct a full 4 FET bridge for 25kW usage.

But there is not a readily packed single gate driver that can deliver a minimum of 5A sink/source for 1200V SiC directly.

Is that means I need to find single >5A gate driver IC, or use two Half Bridge gate driver IC of >5A instead?

Please comment.

Hi,

I am looking for a mosfet which would be appropriate for essentially DC switching of a 400V 7A continuous load.   Low RDS on is preferred as I have limited ability to remove heat easily.

I'm currently using Mosfet IRL60SL216 trise in datasheet is only 180ns but when i use gate driver IR2110PBF, t rise measured is more than 1500ns as in picture, why is trise is so long, is datasheet or mosfet is fall?

Hello

We are using the P channel MOSFET IRLM5103 two switch the 12V for the analog Application. the voltage is switched from Source to drain when the MOSFET is ON.  Also when there is 154V volt at the input (Drain) then there will be 12.5V constant at the output (Source) of the depletion mosfet. due to which the the body diode of the IRLM5103 will be the forward biased and the some of the current will flow to the +12V source. how much current will flow through the body diode when that body diode will forward biased ? what will impact on the +12 Source ?

I have attached the schematic of the application.

I am planning to use this MOSFET BSC026N08NS5 for my one of the Power Redundancy circuit, i just wanted to know if this MOSFET can be used for Automotive Application. The operating temp range of this MOSFET given in Datasheet is -55'c to 150'c.