MOSFET (Si/SiC) Forum Discussions
we are focus on solid circuit breaker topic. and i am interesting in the Si/SiC product from infineon. now i want to know some optimize design for thermal case of IPQC60R010S7.
from the datasheet, i get the thermal resistance ,junction-ambient for SMD version RthJA=45℃/W. I think this value is also
can not be accepted in our application. As I calculation, we will use in 60A/230VAC system. that means when MOSFET is on, the current flow will be 60A, and the Rdson=0.01Ω, we still have P =60*60*0.01=36W. and the temperature-rise will be
T=36*45=1620K, it's so hot for our industrial applications (85℃).
I want to know do you have some solution for our application to solve the thermal case? thanks in advanced.
Show LessHello All,
I'd like to get back from Marking Code to Infineon Part Number: someone could help ?
Marking Code is 5N04L4R2
Thank you
Best Regards
I am trying to run some thermal tests with the device FF6MR12KM1BOSA1 and would like to know the location of the chip die / junction points to accurately measure the hot spot temperatures on the baseplate. The chip die layout or any other assistance would be greatly appreciated.
Show LessI would like to know the difference between the following two ratings (MOSFET dv/dt ruggedness and reverse body diode dv/dt ratings). Since MOSFET and body diode are parallel to each other, won't the minimum of these two ratings would be the max dv/dt?
Any reference material or help on this would be useful.
Show LessDear Support,
Please help to check and advise if the label format and topside marking format are both valid and normal.
If this is normal, pls kindly check some documents or descriptions related to the modification of label and chip marking format.
Show Less
Can you help answer whether both chip markings are correct?Is it possible that the chip markings are different due to different COO or other reasons? Please help explain, thank you!
Show Less
Hello,
I'm simulating a circuit in LTSPICE and looking for a SPICE model for AUIRFR4620. I found a model for IRFR4620, which looks like the non-automotive qualified version of the same part. The datasheets are otherwise very similar, so used the IRFR4620 model in place of AUIRFR4620.
Are there any differences between these parts that could potentially cause inaccuracies in a simulation? Are these parts identical?
Thanks!
Chris
Show LessHi Expert,
Can you provide BTG7050-2EPL 7637 test result since I cannot find it in d/s? Thanks.
BR,
CHENG
Hi,
I came across this PN BSS83P and I would like to know what is the difference between H6327 and H8157 suffix.
I tried locating H8157 details but there isn't one available.
Can anyone help out?
Thanks,
Teressa
Show LessHi
I have been looking at the datasheet for IMBF170R450M1
It has the following data:
When calculating the energy based on the output capacitance of 16pF@1000V I get 8uJ@1000V (0,5*16*10^-12*1000^2=8uJ) . So I would assume Eoss@1000V would be higher than 8uJ, since the output capacitance is voltage dependent and much higher at lower voltages.
Please explain (or correct the datasheet.)
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The datasheet for IMBG120R030M1H makes more sense.
When calculating the energy based on the output capacitance of 105pF@800V I get 33.4uJ@800V (0,5*105*10^-12*800^2=33.4uJ) . So the energy stated in the datasheet is larger due to the voltage dependency.
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