MOSFET (Si/SiC) Forum Discussions
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MOSFET (Si/SiC)
Dear Infineon Community,I am very much interested in the 1.2kV/6mR EasyDual 2B SiC power module (FF6MR12W2M1_B11) and have a few short questions to th...
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Dear Infineon Community,
I am very much interested in the 1.2kV/6mR EasyDual 2B SiC power module (FF6MR12W2M1_B11) and have a few short questions to the experienced user:
I am very much looking forward to your answers and advice.
Kind Regards,
Dominik Show Less
I am very much interested in the 1.2kV/6mR EasyDual 2B SiC power module (FF6MR12W2M1_B11) and have a few short questions to the experienced user:
- Do you know of a plug & play gate driver and/or reference design for a quick evaluation of a phase-leg or H-bridge in the laboratory supporting switching frequencies >>100 kHz?
- From the IFX gate driver application note I learned that the 1EDI60H12AH EiceDriver is one of the recommended gate driver ICs. What is roughly the max. feasible switching frequency (soft-switching, ZVS) using this IC to implement a gate drive.
Is up to 500 kHz switching frequency (~5 Watt of power delivered to the gate of the power module) possible considering some conventional means of cooling? - Do you think one can actually achieve 500 kHz switching frequency with the 1.2kV/6mR SiC power module in a resonance type converter (i.e. ZVS and comparably small turn-off currents).
I am very much looking forward to your answers and advice.
Kind Regards,
Dominik Show Less
MOSFET (Si/SiC)
Hello,The switching parameters of IGBTs are characterized by a double-pulse test with an inductive load. The switching times (Tdon, Tr, Tdoff and Tf) ...
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Hello,
The switching parameters of IGBTs are characterized by a double-pulse test with an inductive load. The switching times (Tdon, Tr, Tdoff and Tf) are defined in relation with the collector current (Ice).
For the MOSFETs (such as SiC MOSFETs), a resistive load is used for the test. The switching times are defined in relation with the drain source voltage (Vds).
My questions are:
Why do we prefer an inductive load for IGBTs? Why the switching times are not measured in relation with the collector voltage (Vce) ?
Why do we always use a resitive load for SiC MOSFET? Can the switching times be defined by the drain current (Ids) or they need to be defined by the drain voltage (Vds) ?
For the context: I need to determine the minimum dead time for two power converters, one made of SiC MOSFETs and the second one made of IGBTs.
Thanks in advance Show Less
The switching parameters of IGBTs are characterized by a double-pulse test with an inductive load. The switching times (Tdon, Tr, Tdoff and Tf) are defined in relation with the collector current (Ice).
For the MOSFETs (such as SiC MOSFETs), a resistive load is used for the test. The switching times are defined in relation with the drain source voltage (Vds).
My questions are:
Why do we prefer an inductive load for IGBTs? Why the switching times are not measured in relation with the collector voltage (Vce) ?
Why do we always use a resitive load for SiC MOSFET? Can the switching times be defined by the drain current (Ids) or they need to be defined by the drain voltage (Vds) ?
For the context: I need to determine the minimum dead time for two power converters, one made of SiC MOSFETs and the second one made of IGBTs.
Thanks in advance Show Less
MOSFET (Si/SiC)
Hi, I have a question, is there any information on measurement techniques of high-speed voltage and current waveforms?
MOSFET (Si/SiC)
Hey all,
is it mandatory to use -5V during turn-off? Can 0 V be used?
is it mandatory to use -5V during turn-off? Can 0 V be used?
MOSFET (Si/SiC)
Hi guys I would like to know if anyone has any experience with SiC in motor drives. If so, could you share the pro's and the con's?
MOSFET (Si/SiC)
Dears, where can I find simulation models for infineon1200 V sic modules? thanks in advance!
MOSFET (Si/SiC)
Hello Infineon Team,I am working as an engineer in the solar industry. Now I saw that you recommend SiC instead of Si for low power solar applications...
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Hello Infineon Team,
I am working as an engineer in the solar industry. Now I saw that you recommend SiC instead of Si for low power solar applications. Can you please explain why? Where do you see the benefits?
Thanks…. Show Less
I am working as an engineer in the solar industry. Now I saw that you recommend SiC instead of Si for low power solar applications. Can you please explain why? Where do you see the benefits?
Thanks…. Show Less
MOSFET (Si/SiC)
Does the body diode drift? Can the SiC MOSFET be used without external Schottky Barrier Diode (SBD)?
MOSFET (Si/SiC)
PCB configuration - how to?
Solved
Hi guys,
What are the main things to consider when designing a PCB for SiC MOSFETs?
Thanks.
What are the main things to consider when designing a PCB for SiC MOSFETs?
Thanks.
Forum Information
MOSFET (Si/SiC)
Power MOSFETs have become an integral part of most of industrial and automotive applications, and Infineon offers leading-edge solutions to suit all needs. Infineon’s innovative OptiMOS™, CoolMOS™, and StrongIRFET™ low and medium voltage power MOSFETs consistently meet the highest quality and performance demands in key specifications for power system design, such as on-state resistance and figure of merit characteristics. Additionally, CoolMOS™ superjunction MOSFET offers a whole host of options for consumer, industrial, and automotive applications such as lighting, TV, audio, server/telecom, solar, EV charging, DC-DC converter, onboard chargers, and many more . In this forum, you can post your questions, comments, and feedback about Si/ SiC MOSFET of both industrial and automotive grades from Infineon.
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