MOSFET (Si/SiC) Forum Discussions

Dear Community Friends:

We purchase 2 reels of IAUT150N10S5N035 from a distributor. I have done External Visual Inspection/ Electrical Test/ X-Ray Inspection/ Decapsulation. I discover they show different interior when do the X-Ray inspection and Decapsulation. Please kindly check on below photos: the supplier told us the 2 reels are 100% produced by Infineon and sent from Infineon to end user. But why they have different interior, they can't not explan to much. When Infineon produce the goods and sent, that's the real cargo, the interior was determined by Infienon, but just confirm us these 2 reels are Infineon original goods.

So we have doubts, why have different interior, both of them had passed External Visual Inspection and Electrical Test by White Horse laboratory. Do you have any suggestions for us? Thanks.

Hi,

I am considering to use FF11MR12W1M1_B11 for converter design. I saw Boards & Designs in the corresponding product page, and the maximal output current of the evaluation board EVAL-PS-E1BF12-SIC is 25A. But the DC drain current of FF11MR12W1M1_B11 is able to reach 100A, and it is much greater than 25A. Is it possible to use FF11MR12W1M1_B11 for high current and high power design?  Please let me know if you have other high current and high power applications based on FF11MR12W1M1_B11.

Hi @Vinay 

This voltage compensator equation is taken from 3.3kW 52V LLC board.   This is the voltage loop which converts voltage to frequency. 

The coefficients are are calculated in this way

voltage_ctr.coeff_A0 = (kp + ki + kd);
voltage_ctr.coeff_A1 = (- kp - (2 * kd));

COEFF_A2= Kd

I have doubt about the calculation of coefficients A0, A1 and A2 which is different than normal PID loop. Can you give me the reference to know more about this fixed point compensator and I would like to know how this voltage compensator differs from normal PID loop. 

Dear Sir,

I have question about resonant sine current of SR MOSFET with distortion when SR turn on….

LLC 250W with VOUT 28V, fsw around 400-500kHz

The primary side is NCP13992 with NV6127 , The second side is  NCP4306 with IPA032N06N3 G.

The resonant sine current of SR MOSFET with distortion when SR turn on, but primary side(NCP13992 with NV6127) resonant is very clear....why?   Could you help use to provide some suggestion?

Secondary side GaN Vds, and second side SR Id

Primary side Ir, low GaN gate, low GaN Vds

What test sockets does Infineon use for IPT004N03L & IPTC012N08NM5?

I'm looking for something similar in concept to the images below.

I am also interested in any test systems that would support such sockets that Infineon might recommend or be aware of.

Greg

Hello all,

I am currently trying to simulate an inverter and a rectifier in Plecs. Both converters controlled and each realized as a full bridge circuit. In this respect I would like to check if it's achieve zero voltage and zero current switching and was wondering if the available thermal sheets take this behavior into account?

I use the sheets provided by Infineon for the IMZ120R030M1H MOSFET.