I am searching for a proper MOSFET and I am really confused regarding IC start-up.

What is the Start-up procedure for IC start-up?
Please Help:) Show Less

Hello,

at the moment I'm creating a PCB design in Eagle. I want to use the IPT015N10N5.
To create a new device in Eagle I was looking for package information containing information about the pad sizes. The datasheet states the package as PG-HSOF-8-1. The prodcut page contains
a pdf "Application Note OptiMOS™ Recommendations for Board Assembly of PG-T(S)DSON Packages". In that pdf the named package is not listed. Therefore I'd like to know which package
from this pdf to use instead of PG-HSOF-8-1. Or were to find information for the PG-HSOF-8-1 package.

Best Regards,

Benjamin Show Less

Studying design documentation and official Infineon application notes I have encountered some problems. Particularly I am a bit puzzled with
[1] Graovac D., Purschel M., Kiep A. MOSFET Power Losses Calculation Using the Data-Sheet Parameters / Infineon: Application Note 2006-07 V1.1. – Infineon Technologies AG, 2006. – 23 p.
As far as I see there is a mismatch between input parameters for MOSFETs dynamic losses calculations and parameters given in datasheets.
According to Fig.6 on page 7 of [1] in hard switching mode the time tri is the interval where the drain current of turning-on MOSFET rises from near zero to load current, while tfu is the interval where the drain current falls during turn-off. These dynamic parameters are used for losses calculation, and as indicated on Fig.7 (and commented in the text on page 6) can be read from a device datasheet (as the worst-case values).
However, as I see in
[2] Huang A. Infineon OptiMOS Power MOSFET Datasheet Explanation / Infineon: Application Note 2012-03 V1.1. – Infineon Technologies AG, 2012. – 30 p.
they represent absolutely different values. According to Fig.31 of this document (page 29) tr is the voltage fall time during turn-on (90% to 10%) while tf is the voltage rise time durin turn-off (10% to 90%). The same definitions are given on page 13 (Table 20) in
[3] MOSFET CoolMOS E6 IPx65R280E6 / Infineon. – 2010. – 19 p.
In my opinion, these two parameters given in datasheets are not relevant to whose indicated in calculation losses strategy.
May be it is because in IGBT datasheets tris defined as the collector current rise time during turn-on and tf is defined as the collector current fall time during turn-off. For example, IGBT case is shown on page 15 in
[4] Infineon IKD06N60RF datasheet. – 2014-03-12, Rev. 2.4. – 16 p.
I come to the conclusion, that the calculation strategy in [1] does not distinguish differences between dynamic characteristics, given in MOSFET datasheets, and dynamic characteristics, given in IGBT datasheets.
Could you, please, explain whether I am right or not and why.
Also, I would be grateful if you can provide other documentation for switching losses calculation for Infineon MOSFETs.
All the documents [1-4] are attached in this letter.
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