MOSFET (Si/SiC) Forum Discussions
Dear Sir or Madam,
We are using IPL65R070C7 in our product.
We need to produce RoHs test report for this part to our QA.
Request you to share same.
Hello everyone, I hope that you can help me. I guess I have a problem to understand something. For my simulation in PLECS I want to define the "thermal Description" for my selected IMZ120R045M1 MOSFET.
For understanding and more I use the Application Note, V1.2, Jan. 2002 "How to Select the Right CoolMOS and its Power Handling Capability" and on the other hand an existing PLECS thermal description model (IMBG120R045M1H) for comparison.
PLECS accesses the LookUp Tables to calculate the power losses. In order to calculate the turn-on losses for the IMBG120R045M1H, custom tables were defined. Which are used for to calculate (for example) the turn on losses of the MOSFET.
To calculate the turn-on losses, the following lookup table "(lookup('e_i_on', 16)^3)*1e-6,0)" is used at the end of the formular. Since I'm just getting started with PLECS, I wanted to ask why this is being done? Isn't it enough to define E_on(v,i,T,Rgon,Rgoff) with the respective tables (without with the explained divisor)?
Thank you very much.Show Less
My question is about the the reference design (VD_1000W_GAN_PSFB_XDP).
(Reference design board-1000 W, 400 V phase-shifted full-bridge current-doubler with XDP™ digital power controller and CoolGaN™ HEMT)
My question is about the part highlighted below
Is this a clamp to protect the low voltage MOSFETs? If so how does it work? and is there a procedure to design it?
电机驱动电路用的MOS是IPB027N10N3，然而在使用过程中发现发热比较严重（电流12.5A 电压48V 功率600W条件下很快就发热了 ），测量U相2个光耦高低输出端波形和U相上下管MOS的G级波形，如图所示：
For a clearance and creepage analysis I need a cad-model of the HybridPACK Drive FS03MR12A6MA1B, most important is that the bus-bars are separated from the housing for the definition.
Thanks! Kind regards, ThomasShow Less