MOSFET (Si/SiC) Forum Discussions

1ED3122MC12H unipolar drive positive series NMOS, the drive side power supply VEE is required to connect to the source of the NMOS, right? However, when giving a high level drive, the line VEE is burned out, as indicated in the following figure; I don't know what the problem is;

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In Imbf170r650m1 MOSFET please let me know how to connect sense pin ID is not used. Can we connect it to source or gate or keep it open?

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Hi Dear Infineon team.

How you are fine!

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The heat sink of PG-HDSOP-16-2 is located at the top of the device, according to the schematic of the application manual, the top heatsink and Drain pole are shorted inside the MOS tube, the real situation should not be shorted, right? Is there any help to confirm this?

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1. When evaluating applications using SOA diagrams for MOSFETs, is the evaluation done using SOA curve diagrams for Tc &Rjc conditions or for Ta &Rja conditions.

2. Does this ID pulse value in the specification have anything to do with the pulse width time? Or does it mean that this value cannot be exceeded for all single pulse current peaks, regardless of the pulse width time?

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Help!

Customer said my label is not original. Please help to verify. Thank you!

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