MOSFET (Si/SiC) Forum Discussions
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Can you please tell me where Figure 30 comes from, is the current drop rate monotonic on the turn-off time?
This is a question asked by a fan in a Zhihu article, please engineer answer~
Link to article is: https: //zhuanlan.zhihu.com/p/403334986
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Show LessLooking for a solar micro inverter solution Infineon PMM-SE1401 complete document
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Show LessHow to minimize the large voltage spike due to di/dt when switching SiC MOSFETs? Is there any specific program or case study reference?
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Show LessDoes the IRLML20230TRPBF contain any titanium in the part?
Hi IFX friends.
#EVAL_3K3W_BIDI_PSFB
I want to adjust output to 24V and adjust TR radio to 72.8m based on EVAL_3K3W_BIDI_PSFB.
But it can't save.
Can you help to advise how to fix it and simulation?
Best Regards.
Jay.
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Show LessDear Sir.
Please help me to see that the dv/dt of MOS and diode are given separately in the specification of Mos tube IPW65R050CFD7A, but in actual testing it is found that the moment dv/dt occurs in reverse recovery both MOS channel and body diode are cut off and the current is charging the CDS. So when reverse recovery occurs this dv/dt specific limit depends on the diode limit or MOS tube, what is the specific difference between the two.
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Show LessDear team
I have 4 questions regarding the thermal characteristics of "BSC117N08NS5".
① Is it correct to assume that "RthJA" in "Table 3" in the data sheet is actually measured under the conditions of "1)"?
② Does this condition mean that the total surface area of the "drain" solid copper foil on the board is "6cm2"?
③ Is it correct to think that increasing the area of the "drain" pattern and placing a thermal via directly under the "drain" are effective ways to improve "RthJA"?
➃ When using it in a DCDC converter, inserting a via increases the "ESL", so is it better not to insert a via in the drain of the low-side switch?
Best Regards,
TOMMAT
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Show LessOne of the problems with scaling in SRAMs is that the leakage current increases when the MOSFET in the SRAM is scaled down. This problem can be avoided if the threshold voltage of the MOSFET is kept constant in the scaling. Does this scaling strategy make sense? If it does not make sense, why?
I hope the engineers can help answer the question about whether this scaling strategy makes sense or not, and give specific reasons why. Thanks~😀
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Show LessI would like to do thermal analysis of MOSFET. Could you provide me with the following MPN 3D data (file extension is .step/.stp)?
- IAUC120N06S5L032
- IAUC60N04S6L039
- IAUCN04S7L028
Best Regards,
Tetsuo
Hi we bought IPD60R600P6 D/C2141+ 2500PCS, but we found there is different lot top marking under same reel "HD3141 " and "HF1141 ", it is common ?wait your kidnly reply. Thanks.
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