MOSFET (Si/SiC) Forum Discussions
1. When the N-MOSFET is completely turned off, when there is a single voltage pulse at both ends of the D-S pole, and the maximum value of the pulse exceeds the minimum value specified in the MOSFET specification. In such a scenario, when evaluating whether the MOSFET is at risk of voltage stress breakdown, is it necessary to look at the pulse width time of this single pulse? Still, there is no need to look at the pulse width time of the pulse; just determine whether the maximum value of the pulse exceeds the minimum value in the specification.
2. When browsing the MOSFET specification, I found that the voltage stress for VDS in the AOS specification, for example, would test a VDS SPIKE parameter; this parameter was not found in the IR specification. So when I use the IR BSZ018N04LS6 device, there will be a single pulse impact with a maximum value of 48V and a pulse width of 500ns at both ends of the D-S pole. In this case, how to determine whether the IR device will break down due to overvoltage according to the parameters in the specification. If I use an AOS device, I can evaluate it based on the parameter values of VDS SPIKE by considering the parameter items in the specification.
Examples of AOS specifications:
Example specifications using IR device models: No VDS SPIKE parameter items
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/MOSFET%E5%99%A8%E4%BB%B6%E7%9A%84%E7%94%B5%E5%8E%8B%E5%BA%94%E5%8A%9B%E9%A3%8E%E9%99%A9%E8%AF%84%E4%BC%B0-%E6%98%AF%E5%90%A6%E4%B8%8E%E5%8D%95%E6%AC%A1%E8%84%89%E5%86%B2%E7%9A%84%E8%84%89%E5%AE%BD%E6%97%B6%E9%97%B4%E6%9C%89%E5%85%B3%E7%B3%BB/td-p/681235
Show LessDear IFXer,
Do you have any experience to explain the following even? We found the black spots on the case of end and ceramic pad after the product high and low temperature cycle.
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I can't find HBM & CDM value in the datasheet, as below item.
MPN | Mfr.name | 元件靜電測試(HBM) | 元件充電模式(CDM) | ||
Voltage | Level | Voltage | Level | ||
IPD90P03P4L-04 | INFINEON | ||||
IPD90P03P4L04ATMA2 | INFINEON | ||||
IPB80P04P4-05 | INFINEON | ||||
IPB80P04P405ATMA2 | INFINEON | ||||
IPC50N04S5L5R5ATMA1 | INFINEON | ||||
TLE4207G | INFINEON | ||||
TLE4207GXUMA2 | INFINEON | ||||
IPG20N04S4L-07 | INFINEON | ||||
IPG20N04S4L07ATMA1 | INFINEON | ||||
IPLU300N04S4-R8 | INFINEON | ||||
IPLU300N04S4R8XTMA1 | INFINEON | ||||
BSZ034N04LS | INFINEON | ||||
BSZ034N04LSATMA1 | INFINEON |
In boost mode, the output power displayed by the GUI will not increase after reaching 500w. Can you tell me how to solve this situation so that he can work properly?
thank you!
Show Lesssmartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/%E6%95%B4%E5%A5%97%E7%94%B5%E6%BA%90%E6%96%B9%E6%A1%88%E6%90%AD%E8%BD%BDIR25603S/td-p/662512
Show LessHello,
Using LTSpice (x64) Version 17.1.15
I've downloaded the OptiMos Library following: Infineon-OptiMOS_PowerMOSFET_PSpice_80V_N-Channel-SimulationModels-v03_00-EN and using the following library: StrongIRFET_80V_LTSpice.lib
When adding the following part to a simulation: IPB016N08NF2S_L1
I receive the following error: 'Undefined subcircuit: S5_80_f2_var'
...I have referenced the 'How to fix common errors in LTspice model simulation' here in the forum and it suggests the following: "To run the same model in LTspice, contact technical support team for the modified version of the file."
I've submitted a request to Technical support, yet I thought I'd post here as well to see if anyone can confirm if I am missing something...
Thank you in advance,
Iain
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Hi,
I am performing the radiation analysis of a product implementing the IRHG567110 and would nee to know its sensitive depth in order to be able to assess its sensitvity to SEGR/SEB. Could you please provide me this confirmation?
Thanks and best regards
Fred
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