MOSFET (Si/SiC) Forum Discussions

谢谢！

Hello,

I was searching for FULLPACK Version of MOSFET IPP65R099CFD7A  to improve the design for manufacturing point of view.

i was not able to find out on website. I can manage packaging but needed complete isolation package for reduce the final product assembly effort.

Regards,

Could you please answer the following question we received via social media?
Question: Is it Bluetooth speaker?

Link to the post: https://www.facebook.com/620993263398649/posts/656037599894215

Thank you

以IAUS300N10S5N015T为例，其手册表明散热焊盘Tab与DRAIN在MOS内部是短接的，那如果像EVAL_TOLT_DC48V_3kW V 3.0那样，将6个mos的tab连接到同一个散热器上，岂不是会导致6个MOS的DRAIN短路？？那还怎么使用？？望解答

IPTC014N10NM5のTOLTパッケージに関して下記ご確認いただけますでしょうか？

https://www.infineon.com/dgdl/Infineon-IPTC014N10NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183e99b37b47439

①裏面に円形の溝がある理由は何でしょうか？

②下記赤枠の推奨パターンがある理由は何でしょうか？

　裏面側（基板側）のパターンのように見えますが、上面放熱タイプであるのにも関わらず、なぜ裏面側にあるのでしょうか？

　また、この部分はレジスト開口部にした方が良いでしょうか？

③推奨パターンに記載されているsolder mask clearanceの意味についてご教授いただけますでしょうか？

　単純にレジスト部にすれば良いでしょうか？

Hello,

I'm trying to simulate transient electrical and temperature behavior  of an IMW120R014M1H SiC Mosfet

My company use Orcad PSpice V17.2.2016

I downloaded the model bank "Infineon-CoolSiC_silicon_carbide_MOSFET_1200V_SPICE-SimulationModels-v01_03-EN",  then added the library "imw-imza120rxxxm1h_7-40mohm" to my design.

I draw a part and tied the 5 pins to the model pins.

When I launch simulation, PSpice made 3 errors that are "ERROR(ORPSIM-16366): Line too long. Limit is 132 characters."

(See Error132CharLong joined)

I tried to modify the faulty lines according to this cadence forum :

https://community.cadence.com/cadence_technology_forums/f/functional-verification/31532/simulation-error-line-too-long-limit-is-132-characters

Lines modified are :

in SUBCKT Z0022 :  

.FUNC N02Y0(N02RN,N02RY,N02SE)={N02V8(N02RN,N02RY,N02SE)*((TANH((N02RY/(N02V8(N02RN,N02RY,N02SE)*
+N02VU(N02RN,N02RY,N02SE)))**(1/N02YH(N02RN,N02SE))))**N02YH(N02RN,N02SE))}

G01NW N03D6 N01U5 VALUE={N02NS*IF(V(N03D6,N01U5)>0.0,N02ZJ(V(TJ,0),V(N03D6,N01U5),V(N01TK,N01U5)),
+N03BE(V(TJ,0),V(N03D6,N01U5),V(N01TK,N01U5)))}

and in SUBCKT Z002I :

G01PF N01TE N01U5 VALUE={N02NS*IF(V(N01TK,N01U5)>3,0,IF(V(N01TE,N01U5)>-N03F7(V(TJ,0),V(N01TK,N01U5)),
+0,-N03D7(V(N01TE,N01U5),V(TJ,0),V(N01TK,N01U5))))}

Now, with the modified SUBCKTs, I have another ERROR, wich is : "ERROR(ORPSIM-15167): Undefined parameter: N02PE."

(see Error_LibModified)

Can someone help me ?

Regards

I would like to use MOSFET BSC072N04LD and I have two questions about it.

• Which MOSFET controller do you recommend to use with this MOSFET?. The load of the MOSFET will be a RF power MMIC with a supply voltage of 24V and maximum power consumption around 5 A. We will have two MMICs and I think that each one will be supplied with each MOSFET of the two units inside this component.

• I would need to test the time response behaviour of the RF power MMIC. Would it be possible to adquire an evaluation board of the previous MOSFET? In case this MOSFET is not available, could you recommend us an evaluation board of something similar to make these tests?.

Thank you very much in advanced for your reply. We would appreciate a quick response.

Hi Infineon Community.

I am ready to run some transient CFD simulations of a pcb board using the above mosfet. I would like to use the network modeling approach to reduce the computational effort.

Is it possible to get detailed models (chips, pads, etc.) so that I CAN develop network models in icepak? If there is already a delphi model available, that would certainly work.

I tried the available STP file, but it's missing the details I want.

thanks

thanks

smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/IAUC120N04S6L009%E8%A9%B3%E7%B4%B0%E6%A8%A1%E5%9E%8Bicepak/td-p/467708

We sell an automotive ECU that has been on the market since before I came here - probably 15 to 20 years. Recently we had three returned with similar failures, one of the fuel injector driver outputs had failed on each. Each of the failures was on a different channel - there are eight channels total in the ECU. The output transistor is an IRLR3705ZPBF that is a low-side driver - the injector has battery voltage on one side and this output switches the other side to ground to turn it on. The only other related component is a current sense resistor between the transistor source and ground. The three failures are similar in that the output is 'stuck' on - the transistor flows enough current that the injector remains on all the time. With no power on the unit, measuring between the output pin (transistor drain) and ground gives a low resistance - two were in the range of 3K ohm while the third was 235 ohms (on a normal channel, the resistance is very high). Unfortunately, these units are potted, so I can't make any other checks. The question is... based on this very limited information (low resistance), is there any indication regarding the cause of the failure? For example, I've seen power MOSFETs fail with nearly a direct short due to over-current, but these resistances are much higher than that. Besides, the output has current monitoring and shuts off when over-currented - my testing indicates that this works. Of the other failure modes, do any generally result in a 'partially' shorted condition? Thanks, Dave.