MOSFET (Si/SiC) Forum Discussions
Hi,
I can't find the datasheet to the IRLR4132TRPBF. My suppliers site gives a lot of rubish as a datatsheet (https://nl.farnell.com/infineon/irlr4132trpbf/mosfet-n-ch-78a-30v-to-252/dp/2726020?st=irlr).
So i'm asking if someone knows where to find the datasheet.
Thanks!
Show LessDear Reader,
For the last few days I have had problems properly simulating the IMZ120R060M1H (level 3 model) in LTSpice to be able to evaluate its thermal performance. For cross-checking with PLECS simulations, I was trying to also observe the case (and heatsink) temperature in LTSpice after having connected an external thermal network modelling the heatsink behaviour.
The case temperature for some reason stays fixed and barely changes (maybe max. in the several 100mV range) even in cases where the junction may rise above 100C or more. In the PLECS simulations however, the case/heatsink temperature is calcualted/simulated properly.
Is there a limitation of the LTSpice model regarding this issue or is this just on my behalf?
Thanks a lot for your help,
Best, Mue.
I have a question about the reference design "EF-DAB11KIZSICSYS" provided by your company.
I think DCDC has voltage mode control, current mode control (peak current mode control), and current mode control (average current mode control) as control methods.
Which control method does the "EF-DAB11KIZSICSYS" use: voltage mode control, current mode control (peak current mode control), or current mode control (average current mode control)?
I'm trying to find out the difference between SOT223-3 and SOT223-4. My understanding is that the -4 indicates the 4 pins and a tab and -3 indicates 3 pins and a tab. I can't find any discernable difference between the two in the data sheets and the SOT223-4 version, which we use in our design, is now obsolete and only the SOT223-3 is available. Any insights?
Show LessWhat is the difference between the IPD60R280P7 and IPD60R280P7S MOSFET?
Which one do you recommend for medical applications with a lifetime of 20 years?
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sic mos turn on with Rg 1ohm,there is a oscillation of Ids at first pulse after device turn on,no ossilation obsoved at vds or vg,the vds peak is not extremely high,chagning the current probe bring no benefit.
can help figure the reason
Show LessDear Team ,
I am going to design ESC for Drone , herewith Specification for ESC.
Typical Current : 45A
P2P current : 50~55A (10sec)
Voltage :12.6V
Package : SMD MOSFET
Pls. help for recommend MOSFET as per above specification and Gate driver .
Thank you.
Best Regards .
Show LessHello,
we are using the IRF540NS and the AUIRF540ZS in our products. Both MOS-FET types are obselete. Is a Form-Fit-Function replacement available?
Show LessI have been wondering Is it okay to give to LIN an inverted signal that goes into HIN say for a dc-dc converter application? Won't we have problems of simultaneous gating of the High side and low side Fets? The simulation That I have done raises no fault except for the fact that the motor seems in my view to run slowly but maybe it could be some other thing.
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