Hi there,

I work at a power electronics company developing EV chargers.

I just wanted to clarify some parameters on the DDB2U40N12W1RF_B11 datasheet. The parameters I wanted to clarify are : IRMSM and IFRMSM. These parameters are listed on Table 3: Maximum Rated Values.

Below is a snippet of the the mentioned table on the DDB2U40N12W1RF_B11 datasheet.

On the picture below, I have drawn my interpretation of these parameters. I am wondering if anyone can confirm my interpretation.

Additionally, the datasheet specified that IFRMSM value is "per chip".  Does per chip mean per one diode on the module?

Thanks in advance

１．お客様がIPMの"IM828-XCC"を検討しています。IM828-XCCが1つではドライブする電流が足りず、IM828-XCCを2つ並列で考えています。IPMを2つ並列で使用する場合、何か注意点はありますでしょうか？
（補足説明）私の理解では、MOSFETを並列で使用する場合、ON/OFFのタイミングがずれると電流アンバランスの電力集中による破壊があると思います。また、Vgs(th)は、個体ばらつきや温度変化が原因で、ON/OFFタイミングがずれる点もケアが必要であると思います。他にも何か気を付ける点があればアドバイス下さい。

２．IM828-XCC以外に、SiC-IPMのリリース予定はありますか？

I brought the PSPICE model into LTSPICE and added external stray inductances of 6.8 nH to the leads and found that there was up to 35 volts of overshoot at the gate even with 10 Ohm external gate resistor. 

I know that the overshoot is caused by resonance from the inductance and the effective gate capacitance of which CGDO contributes and that critical damping occurs when the gate resistor = 1/2 x sqrt (L_stray/C).  So a low value of capacitance would result in an underdamped response with ringing.

I then looked at the model and found that the CGDO value was only 10 pF.  I looked at a similar  Power MOSFET and it had much higher CGDO, about 68 nF.  I then removed the IRHYS9A7234CM model from my schematic and substituted the other MOSFET model.  I saw no ringing or overshoot with the other model.

My question is :  is the CGDO value correct in the irhys9a7234cm  model?

I pasted the SPICE model for the IRHYS9A7234CM (that exhibits the overshoot) below.

Regards,

Ken

.SUBCKT irhys9a7234cm 1 2 3
**************************************
* Model Generated by MODPEX *
*Copyright(c) Symmetry Design Systems*
* All Rights Reserved *
* UNPUBLISHED LICENSED SOFTWARE *
* Contains Proprietary Information *
* Which is The Property of *
* SYMMETRY OR ITS LICENSORS *
*Commercial Use or Resale Restricted *
* by Symmetry License Agreement *
**************************************
* Model generated on Nov 7, 19
* MODEL FORMAT: SPICE3
* Symmetry POWER MOS Model (Version 1.0)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
M1 9 7 8 8 MM L=100u W=100u
.MODEL MM NMOS LEVEL=1 IS=1e-32
+VTO=3.90376 LAMBDA=0.129709 KP=33.9959
+CGSO=1.60177e-05 CGDO=1e-11
RS 8 3 0.0804021
D1 3 1 MD
.MODEL MD D IS=9.9526e-09 RS=0.011175 N=1.5 BV=250
+IBV=0.001 EG=1 XTI=3.09708 TT=1e-07
+CJO=1.10724e-08 VJ=0.5 M=0.9 FC=0.5
RDS 3 1 5e+07
RD 9 1 0.0001
RG 2 7 21.1069
D2 4 5 MD1
* Default values used in MD1:
* RS=0 EG=1.11 XTI=3.0 TT=0
* BV=infinite IBV=1mA
.MODEL MD1 D IS=1e-32 N=50
+CJO=3.56975e-11 VJ=0.5 M=0.9 FC=1e-08
D3 0 5 MD2
* Default values used in MD2:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* BV=infinite IBV=1mA
.MODEL MD2 D IS=1e-10 N=0.4 RS=3e-06
RL 5 10 1
FI2 7 9 VFI2 -1
VFI2 4 0 0
EV16 10 0 9 7 1
CAP 11 10 1.17096e-09
FI1 7 9 VFI1 -1
VFI1 11 6 0
RCAP 6 10 1
D4 0 6 MD3
* Default values used in MD3:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* RS=0 BV=infinite IBV=1mA
.MODEL MD3 D IS=1e-10 N=0.4
.ENDS irhys9a7234cm

Hi Sir,

How to explain the high saturation drift Velocity(Vs cm/s x10^7) of Silicon carbide can operate in high frequency operation?

As I know the electron mobility: μn(cm2/VS) has following formula to explain NFET operate in high frequency operation.

Un is Mobility; L is channel length

Hello Infineon team,

Good morning. Could you please help me to get some data?

Does the IPC70N04S5-4R6 meet 85C/85% relativity humidity 1000 hour test requirement? or similar HAST/JEDEC test?

Do you have micro strain rating of this component?

Thank you in advance,

Alfredo Herrera

Hardware Engineer Kostal

As the title suggests, please tell me the difference between [BSC022N04LS] [BSC022N04LSATMA1] [BSC022N04LS6ATMA1].

I did not understand even if I looked at the datasheet, sorry to trouble you, but thank you.

Here is my knowledge about IRF4905PBF. If you know more about it, please tell me below.

IRF4905PBF, manufactured by Infineon and distributed by Utmel Electronics. Its category belongs to Electronic Components ICs. It is applied to many fields, like Communications equipment Datacom module Industrial Medical Personal electronics PC & notebooks.

For more information, please click here.